High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications

Grebennikov, Andrei; Wong, James; Deguchi, Hiroaki

doi:10.1587/transele.2021mmi0003

Cited by 2 publications

(1 citation statement)

References 22 publications

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“…Microwave power amplifiers are key devices that utilize AlGaN/GaN high-electron-mobility transistors (HEMTs) [1][2][3][4][5][6][7][8][9][10][11][12][13]. Amplifier distortion becomes critical because wideband and multivalue linear modulation is used to achieve high speed and large capacity in modern wireless communication.…”

Section: Introductionmentioning

confidence: 99%

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

Moriwaki

Hara

2022

IEICE Electron. Express

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In this paper, we compare the distortion and power characteristics between AlGaN/GaN high-electron-mobility transistors (HEMTs) with different epi-structures. Third-order intermodulation distortion (IM3) measurement evaluates distortion characteristics, and on-wafer load and source-pull measurements evaluate the power performance. The results show that the AlGaN/GaN HEMTs directly fabricated on GaN substrates without nucleation layer perform better than those fabricated on SiC substrates. Furthermore, the distortion performance is compared with and without field plate.

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Section: Introductionmentioning

confidence: 99%

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

Moriwaki

Hara

2022

IEICE Electron. Express

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A novel design methodology for ultrawideband high‐efficiency hybrid extended continuous inverse class‐F power amplifier

Liu,

Wang,

Cheng

2024

Circuit Theory & Apps

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This paper proposes a design method for designing an ultrawideband and high‐efficiency hybrid extended continuous inverse class‐F power amplifier (PA) based on elliptic low‐pass filtering matching network. This design methodology expands the impedance space by adding free factors to the current equation of traditional inverse class‐F power amplifier (PA). Additionally, an output matching network (OMN) incorporating an elliptical low‐pass filter creates two transmission zeros near the passband and provides a rapid transition to the impedance from passband to stopband. In order to verify the effectiveness and superiority of this design method, an ultrawideband PA working over 0.7–3.7 GHz (136.4%) is designed and fabricated. Over this frequency range, the drain efficiency (DE) is measured as 60.7%–73.4% with the output power of greater than 41 dBm and a large signal gain ranging from 11 to 12.7 dB.

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High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications

Cited by 2 publications

References 22 publications

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

A novel design methodology for ultrawideband high‐efficiency hybrid extended continuous inverse class‐F power amplifier

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