High-power high-efficiency broadband GaN HEMT Doherty amplifiers for base station applications

N-way Digitally Driven Doherty Power Amplifier Design and Analysis for Ku band Applications

“…According to load modulation principles two parallel paths carrying the same amount of current will yied Zj = 25 Ohm, thus allowing an ideally perfect match at the summing junction. [5], [7], [8], [12], [19]…”

“…Based on conventional methods and on recent developments described above that contributes to the state-of the art in Doherty PA's, a derivation of a novel digitally assisted four-way Doherty design is presented for the use in wideband applications in Ku-band. [2], [3], [4], [6], [8], [9], [10], [11], [13], [14], [15], [18], [19], [21], [22], [23].…”

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

“…Microwave power amplifiers are key devices that utilize AlGaN/GaN high-electron-mobility transistors (HEMTs) [1][2][3][4][5][6][7][8][9][10][11][12][13]. Amplifier distortion becomes critical because wideband and multivalue linear modulation is used to achieve high speed and large capacity in modern wireless communication.…”

Coordination of Macro Base Stations for 5G Network with User Clustering

“…HEST is proposed to improve the energy efficiency of 5G BSs with hardware designs, power source modification, and network architecture upgrades. At the BS level, research on the improvement of the energy efficiency of the power amplifiers (PAs) of active antenna units (AAUs) has been extensively studied [ 4 , 5 , 6 ]. Aiming to resolve the problem associated with the efficiency of the BS antenna changes with traffic load fluctuations, Popovic et al summarized the power modulation method to improve the efficiency of PAs and indicated the future development direction and challenges associated with this technology [ 4 ].…”

“…Aiming to resolve the problem associated with the efficiency of the BS antenna changes with traffic load fluctuations, Popovic et al summarized the power modulation method to improve the efficiency of PAs and indicated the future development direction and challenges associated with this technology [ 4 ]. A power amplifier design based on high-voltage GaN HEMT devices has been proposed that is able to transmit high-power signals and ensure the energy efficiency of the PA [ 5 ]. Ali et al designed a linear complementary metal-oxide semiconductor (CMOS) power amplifier based on the use of an amplitude-modulation–phase-modulation (AM–PM) distortion compensation transformer to compensate for the distortion of high-power amplifiers in AM–PM.…”