High Power High Efficiency 270–320 GHz Source Based on Discrete Schottky Diodes

Moro-Melgar, Diego; Cojocari, Oleg; Oprea, Ion

doi:10.23919/eumc.2018.8541364

Cited by 11 publications

(11 citation statements)

References 12 publications

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“…14(b). After power division, amplification and 54level frequency multiplier chain, the output power of each channel was not less than 5 μ W, and the peak power was more than 40 μ W. In 2016, Jeanne Treuttel et al proposed a 2.06 THz all-solid-state heterodyne receiver based on cryogenic cooling [139] . The frequency multiplier link consisted of a 38 GHz oscillator and three cascaded triplers, with diodes supported by 3 μm thick gallium arsenide.…”

Section: High Frequency Multiplier Stagesmentioning

confidence: 99%

“…The 300 GHz doubler had a conversion efficiency of more than 25% and achieved output power of more than 30 mW at 100 mW input power. In 2019, Eric Bryerton et al of VDI reported a solid-state active frequency multiplier chain for DNP-NMR experiments [141] , as shown in Fig. 14(c).…”

Section: High Frequency Multiplier Stagesmentioning

confidence: 99%

“…The terahertz source (262 GHz) was up to 250 mW output power. [135] ; (b) 1.9 THz multi-channel terahertz source (top), and the peak power was more than 40 μW (bottom) [138] ; (c) Solid-state active multiplier chain for DNP-NMR experiments [141]…”

Section: High Frequency Multiplier Stagesmentioning

confidence: 99%

“…Terahertz solid-state frequency multiplier chain. (a) A 4-cascade 1500 GHz all-solid-state chain (top) with fundamentalfrequencies of 88-99 GHz, and the maximum output power of 40 μW with an input of 100 mW (bottom)[135] ; (b) 1.9 THz multi-channel terahertz source (top), and the peak power was more than 40 μW (bottom)[138] ; (c) Solid-state active multiplier chain for DNP-NMR experiments[141]…”

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confidence: 99%

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A Review of Terahertz Sources Based on Planar Schottky Diodes

Kou

Liang

Zhou

et al. 2022

Chinese J of Electronics

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The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging, sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being able to work at room temperature, being small in size, being easy to integrate and having good frequency stability. Terahertz planar Schottky diode is a kind of low parasitic semiconductor device. Its high cutoff frequency makes it work well in the terahertz range. The frequency multiplier based on planar Schottky diode is an important part of terahertz solid state source. In this review, the development of Schottky diodes technology in recent years have been introduced, including the structures and preparation of Schottky diodes. In addition, the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced, and the future development trend is discussed.

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Section: High Frequency Multiplier Stagesmentioning

confidence: 99%

Section: High Frequency Multiplier Stagesmentioning

confidence: 99%

Section: High Frequency Multiplier Stagesmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

A Review of Terahertz Sources Based on Planar Schottky Diodes

Kou

Liang

Zhou

et al. 2022

Chinese J of Electronics

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“…These frequency multipliers can be divided into two categories to achieve the target of high power performance, as: (a) using the single-chip circuit or discrete Schottky diodes and (b) introducing the power-combining topology (the shaded area in the table). In (a) multipliers, 5,8,[19][20][21][22] the high power has been reached mainly with sacrificing partial efficiency or bandwidth. It can be seen from (b) multipliers that the power-combining way is still the preferred solution for the improvement in power-handling capability.…”

Section: Performance Comparisonmentioning

confidence: 99%

A 300 GHz power‐combined frequency doubler based on E‐plane 90°‐hybrid and Y‐junction

Ding

Maestrini

Gatilova

et al. 2019

Micro & Optical Tech Letters

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In this article, a 300 GHz power‐combined frequency doubler using two chips in a single waveguide block is developed to acheive high power handling capability. Each doubler chip integrated with six diodes on a 5‐μm‐thick GaAs membrane is manufactured by the LERMA‐C2N Schottky process. In the power combining architecture, the input wave is split into two paths with a 90° relative phase shift by using a 90° hybrid coupler, and the in‐phase E‐field power combining between the output ports is provided by an E‐plane Y‐junction. This doubler can enjoy comparable performance of bandwidth and efficiency as the single‐chip version except with the twice input power handling. Partial results including ~8 mW output power and ~15% efficiency have been delivered in the band of 260‐310 GHz when pumping with 20‐60 mW input power, which indicates that this dual‐chip doubler can work availably. Such E‐plane power‐combined doubler can be further served to drive high‐power terahertz multiplier chains, and also pump multipixel heterodyne detectors.

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A 315–345 GHz quad‐port balanced tripler with inherent suppressions on even‐order harmonics using discrete Schottky diodes

Li,

Yang,

Zhou

et al. 2024

Micro & Optical Tech Letters

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A high‐efficiency frequency tripler operating up to 330 GHz is developed based on a novel quad‐port balanced configuration. The proposed circuit could inhibit the even‐order harmonics with great idler loops, leaving out the lossy capacitors required in conventional triplers. Meanwhile, this topology employs two pairs of discrete Schottky diodes, which could increase the power‐handling capability by a factor of 2. In this way, a 330 GHz balanced tripler is implemented with four discrete Schottky diodes mounted on a 30‐μm‐thick quartz substrate. At room temperature, the implemented tripler module features a peak output power of 41.1 mW (@321.4 GHz) and a peak efficiency of 12.4%.

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High Power High Efficiency 270–320 GHz Source Based on Discrete Schottky Diodes

Cited by 11 publications

References 12 publications

A Review of Terahertz Sources Based on Planar Schottky Diodes

A Review of Terahertz Sources Based on Planar Schottky Diodes

A 300 GHz power‐combined frequency doubler based on E‐plane 90°‐hybrid and Y‐junction

A 315–345 GHz quad‐port balanced tripler with inherent suppressions on even‐order harmonics using discrete Schottky diodes

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