High-power (&gt;1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

Konttinen, J.; Härkönen, Antti; Tuomisto, P.; Guina, Mircea; Rautiainen, J.; Pessa, M.; Okhotnikov, Oleg G.

doi:10.1088/1367-2630/9/5/140

Cited by 20 publications

(19 citation statements)

References 7 publications

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“…The center wavelength of the emission shifts only by 0.06nmK-1, leaving the output power largely unaffected. Such shift is almost an order of magnitude smaller than typical values of 0.3nmK-1 observed for VECSELs based on GaInNAs quantum wells [67], and the temperature-independent differential efficiency of the device is about 2%. The use of InAs QD active regions for VECSELs could achieve high-power lasers in the 900-1300 nm wavelength range.…”

Section: Vecsels With Stranski-krastanow Qdsmentioning

confidence: 57%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

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Section: Vecsels With Stranski-krastanow Qdsmentioning

confidence: 57%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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“…Extending VECSEL wavelengths to the 1200-1350 nm NIR range has been accomplished using the GaInNAs/GaAs dilute nitride material system on GaAs substrates [127]. Output powers as high as 1.4 W at 1230 nm [88] and 0.6 W at 1322 nm [67] have been demonstrated; microchip mode of operation has also been reported in this material system [181].…”

Section: Demonstrated Power Scaling and Wavelength Coveragementioning

confidence: 99%

“…The total mirror thickness is 4.5 mm and it has a thermal impedance of 21 K W À1 for a 100 Â 100 mm 2 laser spot size [18]. VECSEL semiconductor wafer structures require very good epitaxial growth control of the layer compositions, thicknesses and strains; such control is available with the modern metal-organic vapor-phase epitaxy (MOVPE) [18,57,125,126] and molecular beam epitaxy (MBE) [127][128][129] semiconductor growth techniques. Optically pumped VECSELs require very little processing after wafer growth; no lithographic processing is required.…”

Section: On-chip Multilayer Laser Bragg Mirrormentioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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“…Two growths required for one component InAs/GaAs QDs [83,84] Reduced design flexibility and low modal gain Strain compensated high indium content InGaAs QWs [85] Strain-related lifetime issues Dilute nitride GaInNAs/GaAs QWs [20,62] Formation of nitrogen-related defects 1150-1300 nm wavelength range has previously been very challenging for the growth of SDLs for two main reasons. First, for conventional InGaAs/GaAs QW material a relatively large content of indium must be used to reduce the bandgap energy to the desired value and the high indium content increases the lattice constant of the material causing buildup of strain in the layer structure.…”

Section: Wavelength Coveragementioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs-and GaSbbased gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

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High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

Cited by 20 publications

References 7 publications

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

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