A 1.2 mm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with 80 nm bandwidth.Introduction: Superluminescent diodes (SLDs) are very attractive for many applications such as optical coherence tomography (OCT), and fibre-optic based gyroscopes [1,2]. While the 1.2 mm region is a typical wavelength of minimal absorption and scattering in human tissue, ideal for medical applications [3], 1.2 mm SLDs are also of significant interest for pumping thulium doped tellurite fibre lasers/ amplifiers with high efficiency and lower temperature sensitivity compared to conventional pump lasers [4]. Recently, quantum dots (QDs) have demonstrated significant advantages as the active region for wide bandwidth SLDs owing to their large inhomogeneous broadening and readily saturable states.Intermixing is a powerful technique to modify the bandgap energy of a compound semiconductor, which is currently in commercial use [5]. But until now, most reports have focused on materials and passive devices, with only a few reports dealing with the successful intermixing of active devices [6,7]. Most recently, intermixing has been applied to QDs to increase the homogeneous line-width and reduce the intersubband splitting of QD structures to realise broadband lasers and SLDs with flat-toped emission (i.e. reduced spectral 'dip'), without significant shift in the ground state (GS) emission wavelength [8]. High quality intermixed quantum dot SLDs (QD-SLDs) with a significant shift in the emission wavelength demonstrate a significant step towards utilising selective area intermixing to achieve ultra-broadband SLDs.In this Letter, we demonstrate an intermixed QD-SLD with a 78 nm wide bandwidth (at the highest power) centred at 1185 nm. This intermixed device was fabricated from a quantum dot material having a GS peak wavelength at 1296 nm. The device exhibits a power of 190 mW (50 mW) under pulsed (CW) conditions.