High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

Pottrain, A.; Lacave, Thomas; Ducatteau, D.; Gloria, D.; Chevalier, P.; Gaquière, C.

doi:10.1109/led.2011.2177631

Cited by 13 publications

(3 citation statements)

References 10 publications

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“…However, despite this miniaturization of the sizes of the pads and the pitch compared to the commercial GSG probes, these probes still have relatively large pad sizes and pitches. This means that they are not fully compatible with future miniaturized IC microelectronic components, such as CMOS sub-10 nm (FD SOI, or fully depleted silicon on insulator) [21,22], SiGe HBT (heterojunction bipolar transistor) [23], and nanodevices based on nanomaterials [24,25].…”

Section: Mems Probes For On-wafer Rf Microwave Characterization Of Fu...mentioning

confidence: 99%

MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization

Marzouk¹,

Arscott²,

Fellahi³

et al. 2015

J. Micromech. Microeng.

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This article presents microelectromechanical system (MEMS) ground-signal-ground (GSG) probes based on silicon-on-insulator (SOI) technology for on-wafer microwave characterization of radio-frequency (RF) microelectronics. The probe is designed using optimized coplanar waveguide structures with the aim of ensuring a low-contact resistance between the probe and the pads of the device under test (DUT). The probes are batch fabricated using SOI substrates and employ a simple silicon micromachining process. The probes have a pitch of 4.5 µm with miniaturized dimensions for a DUT pad area with a similar size. Electrical (dc) measurements show that the fabricated probe has a low-contact resistance (~0.02 Ω) on gold pads. Excellent extracted RF performances of the probe are observed up to 30 GHz, showing an insertion loss better than 2.2 dB and return loss better than 20 dB over the frequency range. An ageing study shows the probes are capable of forming this dc contact for over 6000 contact cycles. The preliminary result of the repeatability of on-wafer one-port measurements with the miniaturized probe shows a consistent RF performance maintained through several contacts. The data indicates that the proposed MEMS probe is suitable for the high-frequency characterization of integrated nanoscale devices having reduced pad dimensions.

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Section: Mems Probes For On-wafer Rf Microwave Characterization Of Fu...mentioning

confidence: 99%

MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization

Marzouk¹,

Arscott²,

Fellahi³

et al. 2015

J. Micromech. Microeng.

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“…Very good agreement is observed between Harmonic Balance simulation (lines) using the transistor compact model and RF power measurement (symbols). A load pull analysis at 94GHz of the same device was presented in [4].…”

Section: Large Signal Analysis: Single-emitter Devicementioning

confidence: 99%

(Invited) Electro-Thermal Characterization of SiGe HBT PA-Cells

Zimmer

Weiß²,

Matos

et al. 2014

ECS Trans.

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This paper investigates electrical performances of two different transistor array configurations operating as 60GHz power amplifier cells. Maximum RF power gain and a maximum PAE are determined using a load-pull measurement set-up. The electrical and thermal behavior between multi-finger transistor and multi-transistor array are compared. Drawbacks and advantages of each structure are discussed and the current preference of the usage of multi-emitter structures versus multi-transistor structures is questioned.

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“…The few reports of W-band measurement systems involving passive tuners all suffer from this limitation [3]- [7], presenting maximum reachable Γ of 0.5-0.6 magnitude. An improvement to this approach is available with probe integrated tuners as in [8], but this solution as well offers a limited Γ (0.82 at 100 GHz).…”

Section: Introductionmentioning

confidence: 99%

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Teppati

Benedickter

Marti

et al. 2014

IEEE Trans. Microwave Theory Techn.

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A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open loop techniques in a cost effective way: load reflection coefficients ΓL as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith Chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-THz frequencies, and W-band MMIC design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-THz integrated circuits. First measurements performed on high performance InP double heterojunction bipolar transistors (DHBTs) and GaN high electron mobility transistors (HEMTs) are presented.

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High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

Cited by 13 publications

References 10 publications

MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization

MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization

(Invited) Electro-Thermal Characterization of SiGe HBT PA-Cells

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

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