High power density inverter utilizing SiC MOSFET and interstitial via hole PCB for motor drive system

Sato, Ikuya; Tanaka, Takaaki; Hori, Masashi; Yamada, Ryuuji; Toba, Akio; Kubota, Hisao

doi:10.1002/eej.23323

Cited by 4 publications

(3 citation statements)

References 13 publications

(27 reference statements)

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“…Ball等 [11] 通过仿真模拟重离子入射SiC MOSFET 器件, 发现离子入射诱导产生高局域态能量脉冲导致器件性能退化或者烧毁; 同时该团队 [12] 通过实验对比和仿真模拟发现, 更厚的外延层、更低的掺杂浓度可以显著增大器件SEB阈值电压. 目前商用的SiC MOSFET分为平面栅型和沟槽型两种结构 [13] , 在相同元胞尺寸下, 双沟槽型碳化硅MOSFET (double-trench MOSFET, DT-MOSFET)相比于传统平面栅型碳化硅MOSFET (vertical double-diffused MOSFET, VDMOSFET), 具有更高的沟道迁移率、更低的比导通电阻以及更大的电流密度, 优异的性能使得SiC DTMOSFET 具有更广阔的应用前景 [14][15][16][17] . 然而, 目前大多数研究都是针对SiC VDMOSFET的单粒子效应, 关于SiC DTMOSFET的单粒子效应研究较少.…”

Section: 不同Let值的重离子实验发现器件seb阈值电压会随入射离子Let值的增大而显著降低当unclassified

Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors

Li,

Guo,

Zhang

et al. 2024

Acta Phys. Sin.

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In the paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages were carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect was analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage was 400 V during irradiation, the device has a single event burned in the fluence of 9×104 ion/cm2, and the bias voltage was 500 V, the device has a single event burned in the fluence of 3×104 ion/cm2, so when the LET value was 37.3 MeV·cm2/mg, the SEB threshold of DUTs does not exceed 400 V, which was lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with bias voltage of 100 V did not change significantly during irradiation, When the bias voltage is 200 V and 300 V, the gate leakage and the drain leakage of the device are increased, which is positively related with bias voltage. Combined with TCAD simulation further analysis device single particle effect mechanisms, the simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combine with the source-drain bias voltage leads to the formation of leakage current channels in the gate oxygen layer. At high bias voltage, the electrons generated by the heavy ion incident move towards the junction of the N- drift layer and the N+ substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, and causes single event burnout. This work provides a reference and support for the study of radiation effect mechanism and application of silicon carbide power devices for aerospace applications.

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Section: 不同Let值的重离子实验发现器件seb阈值电压会随入射离子Let值的增大而显著降低当unclassified

Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors

Li,

Guo,

Zhang

et al. 2024

Acta Phys. Sin.

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“…For SiC power devices, although SiC materials have a comprehensive bandgap structure and strong radiation resistance, they still exhibit significant single-event radiation effects due to the process structure and operating characteristics of the device, leading to severe leakage and even burnout [6,[8][9][10], seriously hindering their rapid application in the aerospace field. At present, the damage mechanisms of single-event burnout (SEB) and single-event gate rupture (SEGR) induced by heavy ions in space are difficulties and hot topics in the study of single-event effects in SiC MOSFETs [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation

Xiang,

Liang,

Feng

et al. 2023

Electronics

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A leakage current is the most critical parameter to characterize heavy ion radiation damage in SiC MOSFETs. An accurate and refined analysis of the source and generation process of a leakage current is the key to revealing the failure mechanism. Therefore, this article finely tests the online and post-irradiation leakage changes and leakage pathways of SiC MOSFETs caused by heavy ion irradiation, analyzes the damaged location of the device in reverse, and discusses the mechanism of leakage generation. The experimental results further confirm that an increase in the leakage current of a device during heavy ion irradiation is positively correlated with the applied voltage of the drain, but the leakage path is not direct from the drain to the source. The experimental analysis of the source of the leakage current of the device after irradiation indicates that there is also a leakage current path between the device gate and source. The research results suggest that the experimental sample is more prone to a single-event gate rupture effect under this heavy ion radiation condition. The gate breakdown mainly occurs in the gate oxide layer at the neck region. This research can provide a theoretical basis for the radiation resistance reinforcement of SiC power devices.

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“…Nowadays, silicon carbide (SiC) MOSFETs are commonly used in a wide range of power electronics converters where high switching frequency, high efficiency, and high power density are required [1][2][3][4][5][6][7]. They proved to be reliable successors of silicon-based transistors in many applications, and currently, they are being used in large-scale projects like electric cars traction inverters [8,9], electric buses traction inverters [10,11], high power battery chargers [12][13][14], or new generation power electronics converters sets for locomotives [15].…”

Section: Introductionmentioning

confidence: 99%

Bulletin of the Polish Academy of Sciences: Technical Sciences

Zięba,

Rąbkowski

2022

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High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities. As the switching processes get increasingly rapid, the parasitic capacitances and inductances appearing in SiC MOSFET power modules affect switching transients more and more significantly. Even relatively small parasitic capacitances can cause a significant capacitive current flow through the SiC MOSFET power module. As the capacitive current component in the drain current during the turn-off process is significant, a commonly used method of determining the switching power losses based on the product of instantaneous values of drain-source voltage and drain current may lead to a severe error. Another problem is that charged parasitic capacitances discharge through the MOSFET resistive channel during the turn-on process. As this happens in the internal structure, that current is not visible on the MOSFET terminals. Fast switching processes are challenging to measure accurately due to the imperfections of measurement probes, like their output signals delay mismatch. This paper describes various problems connected with the correct determination of switching power losses in high-speed SiC MOSFET power modules and proposes solutions to these problems. A method of achieving a correct time alignment of waveforms collected by voltage and current probes has been shown and verified experimentally. In order to estimate SiC MOSFET channel current during the fast turn-off process, a method based on the estimation of nonlinear parasitic capacitances current has also been proposed and verified experimentally.

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High power density inverter utilizing SiC MOSFET and interstitial via hole PCB for motor drive system

Cited by 4 publications

References 13 publications

Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors

Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors

Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation

Bulletin of the Polish Academy of Sciences: Technical Sciences

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