High power cw operation over 400 mW on five-stripe phase-locked laser arrays assembled by new junction down mounting

Abstract

The junction down mounting attached to a Si-submount with Au-Si solder has been shown to be very reliable for lasers by aging tests of 5 mW at 80° C. The thermal resistance of this junction down mounting is 30 K/W smaller than that of a junction up mounting. Output powers as high as cw 80 mW/stripe, corresponding to 400 mW, was realized without saturation with a five-stripe phase-locked laser array with an inner-stripe configuration assembled on this mounting.

High Power Diode Laser Research In Mitsubishi Electric

“…However, they may not come under the category to be discussed here. Figure 9 shows a schematic drawing of a typical phase-lock ed laser array with five stripes which we have developed [7]. In fabricatin g the lasers, MOCVD technique was employed to grow the current blocking layer of n-GaAs on p-GaAs substrate.…”