High power conversion efficiency and wavelength-stabilized narrow bandwidth 975nm diode laser pumps

Kanskar, M.; Cai, Jun; Galstad, C.; He, Yabai; Macomber, S.H.; Stiers, E.; Tatavarti-Bharatam, S. R.; Botez, D.; Mawst, Luke J.

doi:10.1117/12.669036

Cited by 7 publications

(2 citation statements)

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“…Distributed feedback (DFB) semiconductor lasers, characterized by high power and efficiency [1,2], narrow linewidth [3,4], and tunable wavelength [5] have many applications in laser communication [6,7], in radar [8], and as a pumping source [9]. The portion of the spectrum near 770 nm, which contains the transition lines of Mg, K, Fe, Ni, and many other atoms [10], also has many applications.…”

Section: Introductionmentioning

confidence: 99%

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Ruan

Chen

et al. 2021

Applied Sciences

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The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

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Section: Introductionmentioning

confidence: 99%

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Ruan

Chen

et al. 2021

Applied Sciences

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“…The spacing of individual wavelengths is minimized to achieve the best possible scaling of brightness. Distributed feedback [1], distributed Bragg resonator [2], Littrow cavity [3] and volume Bragg grating [4] are commonly used. DFB and DBR structures are integrated into the diode and a change in wavelength requires a specific wafer run, while the external grating determines VI the emission wavelength in the Littrow and VBG resonator designs, identical standard diodes can be used for a relatively broad wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Compact high brightness diode laser emitting 500W from a 100μm fiber

Heinemann

Fritsche²,

Kruschke³

et al. 2013

SPIE Proceedings

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High power, high brightness diode lasers are beginning to compete with solid state lasers, i.e. disk and fiber lasers. The core technologies for brightness scaling of diode lasers are optical stacking and dense spectral combining (DSC), as well as improvements of the diode material. Diode lasers have the lowest cost of ownership, highest efficiency and most compact design among all lasers.Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. Multiple single emitters, each rated at 12 W, are stacked in the fast axis with a monolithic slow axis collimator (SAC) array. Volume Bragg Gratings (VBG) stabilizes the wavelength and narrow the linewidth to less than 1 nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. Subsequently polarization multiplexing generates 450 W with a beam quality of 4.5 mm*mrad.Fast control electronics and miniaturized switched power supplies enable pulse rise times of less than 10 µs, with pulse widths continuously adjustable from 20 µs to cw. Further power scaling up to multi-kilowatts can be achieved by multiplexing up to 16 channels. The power and brightness of these systems enables the use of direct diode lasers for cutting and welding. The technologies can be transferred to other wavelengths to include 793 nm and 1530 nm. Optimized spectral combining enables further improvements in spectral brightness and power.Keywords: High power diode laser, high brightness diode laser, fiber coupling, spectral combining, narrow bandwidth, wavelength stabilization, short pulses BACKGROUNDHigh power diode lasers find an increasing number of applications in materials processing and pumping of solid state lasers as their brightness increases. Beyond improvements in the design of the diodes themselves -for minimum slow axis divergence, highest power from a given size aperture and improved wall plug efficiency -optical and spectral stacking are deployed to scale power and brightness. Single emitters and minibars allow the highest brightness from the diode aperture. Single emitters typically deliver 12 W from a 100 µm aperture with 11 o slow axis divergence resulting in a similar brightness per emitter as minibars with up to 8 W from the aperture. Minibars require additional optics for beam shaping that can be omitted for single emitters. Single emitters also require low drive currents up to 15 A, which can be easily modulated with more than 100 kHz. Due to the low current cost effective power supplies are available. Furthermore, single emitter chip on submount (COS) is an established component that is available from various suppliers at a variety of different wavelengths and with exceptional ensemble reliabilities of tens of thousands of hours.Optical stacking is state of the art for power scaling, and many different configurations are available for bars and single emitters. Spectral stacking allows scaling of brightness and power. A narrow and stable spectrum of individual diodes is require...

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Thermal Management Characterization of Microassemblied High Power Distributed-Feedback Broad Area Lasers Emitting at 975nm

Mostallino

Garcia

Deshayes

et al. 2017

2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

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High power conversion efficiency and wavelength-stabilized narrow bandwidth 975nm diode laser pumps

Cited by 7 publications

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Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Compact high brightness diode laser emitting 500W from a 100μm fiber

Thermal Management Characterization of Microassemblied High Power Distributed-Feedback Broad Area Lasers Emitting at 975nm

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