High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

Provence, Sydney; Ricker, Russell J.; Aytac, Yigit; Boggess, Thomas F.; Prineas, J. P.

doi:10.1063/1.4931914

Cited by 18 publications

(6 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recent work from the same group on LEDs grown on GaAs shows a higher performance at 77 K than comparable devices on GaSb, despite high dislocation density on the GaAs wafers [144], while the Shockley-Read-Hall recombination was significant at a low injection current for typical operating current densities (100-1000 A cm −2 ). The superior thermal conductivity and lower IR absorbance of GaAs compared to GaSb enabled higher external quantum efficiency for dislocated devices on GaAs.…”

Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb mentioning

confidence: 94%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

139

View full text Add to dashboard Cite

The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

show abstract

Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb mentioning

confidence: 94%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

139

View full text Add to dashboard Cite

show abstract

“…The InAs/GaSb-based active region was grown as described in previous work from this group . The transition layers used to grow the active region onto lattice-mismatched GaAs are also detailed in previous work . The stack was grown to have an emission wavelength of λ = 3.6 μm at 77 K. The measured wavelength from photoluminescence measurements of the wafer was centered at λ = 3.5 μm at 77 K, with a full-width at half-maximum (FWHM) of approximately 0.25 μm.…”

Section: Methodsmentioning

confidence: 99%

Over Three Hundred Percent Increased Light Extraction from Emitters at Mid-Infrared Wavelengths Using Metalenses

Bogh

Muhowski

Montealegre

et al. 2020

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

Low extraction efficiencies continue to be a source of parasitic heating and decreased performance in infrared light-emitting diodes. Research into metasurfaces and the advance of methods used to fabricate these planar structures have made it possible to realize a metalens tailored to increasing the radial output of geometrically constrained superlattice lightemitting diodes (SLEDs). The metalens presented here, which allows for unprecedented control over optical wavefronts on a subwavelength scale, was designed to promote the extraction for an emitter of a specific mid-wave infrared (MWIR) wavelength, dielectric material, and unpolarized, Lambertian output. Results from a representative optical sample showed an enhanced output of 3.3× of the metalens design when compared to a planar surface. We also include results of a design of experiment where metalens performance was tracked as a function of distance from the emitter and the height of nanopillars making up the metalens.

show abstract

“…In 2015, Provence et al . [ 81 ] showed that SL-LEDs grown on mismatched GaAs substrate exhibited higher radiance than those grown on lattice GaSb substrates at a measurement temperature of 77 K. The higher emission power of GaAs substrates can be explained due to the lower absorption of light in the MIR region as well as the better thermal properties of the GaAs substrate compared to GaSb. Furthermore, measurement of recombination coefficients revealed that the shorter Shockley–Read–Hall recombination lifetime of the dislocation defects when grown on GaAs affects quantum efficiency only at low current injection.…”

Section: Advancements In Mir Light Sources Beyond Lasersmentioning

confidence: 99%

Advanced mid-infrared lightsources above and beyond lasers and their analytical utility

Hlavatsch

Mizaikoff

2022

ANAL. SCI.

View full text Add to dashboard Cite

In the mid-infrared (MIR) spectral range, a series of applications have successfully been shown in the fields of sensing, security and defense, energy conservation, and communications. In particular, rapid and recent developments in MIR light sources have significantly increased the interest in developing MIR optical systems, sensors, and diagnostics especially for chem/bio detection schemes and molecular analytical application scenarios. In addition to the advancements in optoelectronic light sources, and especially quantum and interband cascade lasers (QCLs, ICLs) largely driving the increasing interest in the MIR regime, also thermal emitters and light emitting diodes (LEDs) offer opportunities to alternatively fill current gaps in spectral coverage specifically with analytical applications and chem/bio sensing/diagnostics in the focus. As MIR laser technology has been broadly covered in a variety of articles, the present review aims at summarizing recent developments in MIR non-laser light sources highlighting their analytical utility in the MIR wavelength range. Graphical abstract

show abstract

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

Cited by 18 publications

References 43 publications

Next-generation mid-infrared sources

Next-generation mid-infrared sources

Over Three Hundred Percent Increased Light Extraction from Emitters at Mid-Infrared Wavelengths Using Metalenses

Advanced mid-infrared lightsources above and beyond lasers and their analytical utility

Contact Info

Product

Resources

About