High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates

Abstract

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202¯1¯) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

“…1 Reduced polarization-related electric fields in InGaN quantum wells 2 which can be exploited to reduce efficiency droop, 3 as well as high indium uptake during III-nitride heterostructure formation, 4 make these growth orientations attractive for achieving high efficiency devices emitting in the blue and green spectral regions. Several research groups have achieved high efficiency blue and green lasers with growth planes such as (2021) 5,6 and (2021), 7 as well as low droop light emitting diodes with semipolar (2021) 3 and (3031) 8 planar geometries.…”

Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs

“…As can be seen from the above-mentioned text, new solutions to increase the mode confinement in these structures are pursued. Currently, the most attractive approaches, already proven for blue EELs, involve the use of ITO (indium-tin-oxide) as a partial replacement for the p-GaN in EEL ITO p-claddings [3], using lattice-matched n-AlInN in AlInN EELs [4] or incorporating highly doped (plasmonic) n-GaN as a part of the n-claddings or substrate in GaN ++ EELs [5]. However, according to [6], it is sufficient to increase the thickness of the InGaN waveguides in blue EELs to achieve efficient confinement of the optical mode within its active region.…”

Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

“…The development of InGaN based laser diodes (LDs) [1] for visible light communication [2] has recently attracted increasing attention. The common feature of the devices demonstrated so far has been the implementation of direct current modulation of laser diodes [3][4][5].…”