High-power and single-mode VCSEL arrays with single-polarized outputs by using package-induced tensile strain

Shi, Jin Wei; Khan, Zuhaib; Horng, Ray−Hua; Yeh, Hsiao Yun; Huang, Chun Kai; Liu, Cheng Yi; Shih, Jie Chen; Chang, Yung Hao; Yen, J.L.; Sheu, Jinn-Kong

doi:10.1364/ol.398896

Cited by 17 publications

(8 citation statements)

References 16 publications

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“…This may lead to a lower RIN and better eye-patterns performance under large signal modulation [29], as will be discussed later. The stable polarized output along the <011 > orientation of our array can be attributed to the growth of the epi-layer on the misoriented GaAs substrate [33] and the external stress induced by the electroplating of the copper substrate [27]. Under such external stress, the QSM performance (Wo:14 m) of array A switches to SM, as shown in Figure 13, due to the enhancement in selectivity of single polarized states, which usually leads to fundamental single-mode lasing [27].…”

Section: Measurement Resultsmentioning

confidence: 90%

“…The stable polarized output along the <011 > orientation of our array can be attributed to the growth of the epi-layer on the misoriented GaAs substrate [33] and the external stress induced by the electroplating of the copper substrate [27]. Under such external stress, the QSM performance (Wo:14 m) of array A switches to SM, as shown in Figure 13, due to the enhancement in selectivity of single polarized states, which usually leads to fundamental single-mode lasing [27]. On the other hand, with a smaller Wo of 11µm, the OPSR of both arrays (A and B) decreases from 10 to 6 dB.…”

Section: Measurement Resultsmentioning

confidence: 90%

“…We can clearly see that compared with the quasi-SM optical spectra appearing in Figures 6 and 7, the optical spectra for array A with a Wo of 14 µm show a switch from quasi-SM to SM after performing electroplating. The enhancement in fundamental mode selectivity of our VCSEL structure can be to the single polarized lasing mode induced by the strain caused by the addition of the electroplated copper substrate [27]. As compared to array A with the 14 µm Wo, the electroplated copper substrate induced mode switching is less pronounced for the case of 11 µm Wo.…”

Section: Measurement Resultsmentioning

confidence: 93%

“…The improvements in static/dynamic performances are due to the dilution of the photon density in the SM output pattern from each VCSEL unit produced by the extended mesas along with the VCSEL cavity. Moreover, the external strain induced by the electroplated copper substrate leads to a single polarized lasing mode and an increase of the fundamental mode selectivity, which respectively reduces the RIN peak and further enhances the brightness of the output beam [27][28][29]. The demonstrated 7×7 array exhibits a maximum SM power of around 91 mW with a 1/e 2 divergence angle as narrow as 7 o (FWHM: 5 o ), single polarized output (10 dB orthogonal polarization suppression ratio), and clear eye-opening under 12.5 Gbit/sec modulation.…”

Section: Introductionmentioning

confidence: 99%

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High-Brightness, High-Speed, and Low-Noise VCSEL Arrays for Optical Wireless Communication

Khan

Chang

Pan³

et al. 2022

IEEE Access

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The development of high-speed and high-brightness vertical-cavity surface-emitting lasers (VCSELs), which can serve as an efficient light source for optical wireless communication (OWC), play a crucial role in growth of the next generation of wireless communication networks, e.g., 6 G and satellite communications. In this work, by optimizing the size of the Zn-diffusion and oxide-relief apertures in a high-speed 850 nm VCSEL, we obtain record-high brightness (2.9 MWcm sr at 10 mW output) with single polarized and (quasi-) single-mode (SM) outputs under continuous wave (CW) operation. However, such high brightness output comes at the cost of spatial hole burning (SHB) effect and degraded quality of 25 Gbit/sec eye patterns. In addition, an SM VSCEL array structure is usually needed to further boost the total available optical power for long-reach OWC. Here, a novel (quasi-) SM VCSEL array structure is demonstrated which releases the trade-off between the performances of brightness and eye-pattern quality.Our demonstrated array has a special crisscross mesa connecting neighboring VCSEL units and an extra electroplated copper substrate integrated on the backside of the chip. Compared to the reference array without the copper substrate and connected active mesas, the demonstrated array exhibits a higher (quasi-) SM output power, narrower divergence angle, larger orthogonal polarization mode suppression ratio (OPSR), and flatter E-O response. This in turn leads to smaller jitter and less noise in the measured 12.5 Gbit/sec eye-patterns. The demonstrated 7x7 array exhibits a maximum SM power of around 90 mW with a 1/e 2 divergence angle as narrow as 7 o (FWHM: 5 o ), single polarized output (10 dB OPSR), decent relative intensity noise performance (< -130 dB/Hz) and clear 12.5 Gbit/sec eye-opening. Such new device with remarkable static/dynamic performances has strong potential to further improve the product of the linking distance and data rate in the next generation of OWC channels.

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Section: Measurement Resultsmentioning

confidence: 90%

Section: Measurement Resultsmentioning

confidence: 90%

Section: Measurement Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-Brightness, High-Speed, and Low-Noise VCSEL Arrays for Optical Wireless Communication

Khan

Chang

Pan³

et al. 2022

IEEE Access

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“…Large apertures help to lower the device temperature for high output power, but can also lead to multimode operation. Therefore, various alternative approaches have been investigated to achieve high single-mode output power with aperture diameters larger than 4 µm, including photonic crystal [9] or holey-structure integrated VCSELs [10,11], anti-resonant reflecting optical waveguide VCSELs [12], Zndiffusion VCSELs [13], and multi-wavelength VCSELs [14].…”

Section: Introductionmentioning

confidence: 99%

High-power single-mode 894 nm VCSELs operating at high temperature (> 2 mW @ 365 K)

Zhou

Zhang

et al. 2022

Appl. Phys. B

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In this study, we realize the high-power output of a single-mode 894 nm vertical-cavity surface-emitting laser (VCSEL) at high temperature. The effects of the dimensional parameters of oxide aperture and surface relief on the transverse mode and threshold gain of VCSEL were analyzed. Through collaborative optimization of the oxide aperture and relief, the VCSEL with 8 µm oxide aperture diameter and 5 µm surface relief inner diameter can operate at high temperature of 365 K with single-mode output power of 2.02 mW and side-mode suppression of 29.2 dB.

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Single‐Mode, High‐Brightness, and High‐Speed VCSEL Arrays

Khan

Shi

2021

Digital Encyclopedia of Applied Physics

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Optical sources such as high‐brightness and high‐speed vertical‐cavity surface‐emitting laser (VCSEL) arrays are preferred for a variety of applications such as, LiDAR, 3‐D sensing, and free‐space optical communication (FSC). However, further improvement in depth of resolution and ranging distance for these time‐of‐flight (ToF)‐driven systems can be accomplished by using VCSEL arrays having high brightness (large output power and narrow divergence angle) and faster response time. However, to increase the output power of these VCSEL arrays to watt level, several light emission apertures (several hundreds) need to be connected in parallel, which results in large parasitic capacitance. Hence, RC‐limited bandwidth becomes an influential aspect that restricts the speed of these high‐power VCSEL arrays. In this review article, we discuss recent progresses in high‐power VCSEL arrays and our own achievements in this field. By using tensile strain (induced by electroplated copper substrate) and Zn‐diffusion technique, we elaborate our previous work in which we successfully demonstrated a novel VCSEL array having high power (3 W), highly single mode (SM), high brightness (1 e−2divergence angle, ∼10°), and single‐polarized output performance without increasing threshold current (Ith) and intra‐cavity loss. Furthermore, thanks to the oxide‐relief process, which has tendency to decrease the parasitic capacitance that leads to rise time of demonstrated VCSEL array as short as around 100 ps. This number is around ten times shorter than that of commercially available VCSEL arrays with the same output power level (∼3 W) at the same wavelength (∼940 nm).

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High-power and single-mode VCSEL arrays with single-polarized outputs by using package-induced tensile strain

Cited by 17 publications

References 16 publications

High-Brightness, High-Speed, and Low-Noise VCSEL Arrays for Optical Wireless Communication

High-Brightness, High-Speed, and Low-Noise VCSEL Arrays for Optical Wireless Communication

High-power single-mode 894 nm VCSELs operating at high temperature (> 2 mW @ 365 K)

Single‐Mode, High‐Brightness, and High‐Speed VCSEL Arrays

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