High-power and high-temperature operation of an InGaN laser over 3 W at 85 °C using a novel double-heat-flow packaging technology

Abstract

In this paper, we present a novel double-heat-flow (DHF) packaging technology of an indium gallium nitride (InGaN) laser diode (LD) promising for high-power and high-temperature operation. The LD chip on a submount is covered by another III–nitride ceramic submount, which reduces the thermal resistance, facilitating the assembly in a commercial compact package. A DHF LD operates with a maximum output power of over 3 W at 85 °C as well as that of 1.9 W even at 140 °C.

A Luminous Efficiency-Enhanced Laser Lighting Device with a Micro-Angle Tunable Filter to Recycle Unconverted Blue Laser Rays

“…Therefore, laser lighting still faces the problem of heat dissipation under high-power density. For the laser light source, a variety of heat dissipation methods have been developed, including microchannels, heat pipes, forced air cooling, and double heat sinks [28][29][30][31][32]. Though, at present, there are reliable means to dissipate the heat of a laser light, phosphor converters are still facing the challenge of heat dissipation.…”

Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method

“…Vertical conductive devices (current injection in the vertical direction), i.e. vertical-type device, have been demonstrated to achieve high light output power via high current injection in visible devices, such as blue LEDs and LDs, [12][13][14][15] in which, an n-electrode is typically formed on the backside of the substrate for devices grown on freestanding c-plane n-GaN substrates, i.e. the nitrogen surface.…”

A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water

“…Many of these UV light-emitting devices require high light output power and thus require a high-current operation. In visible light-emitting devices such as blue LEDs and LDs, [8][9][10][11] highcurrent and high-power operations are achieved by vertical devices. These devices are fabricated by exfoliating device structures grown on sapphire substrates using the laser lift-off (LLO) method 8,9) or by using device structures fabricated on freestanding n-GaN substrates.…”

“…These devices are fabricated by exfoliating device structures grown on sapphire substrates using the laser lift-off (LLO) method 8,9) or by using device structures fabricated on freestanding n-GaN substrates. 10,11) Like these devices, n-electrodes are formed on the nitrogen-polar side of the GaN back surface. However, it is essential to exfoliate insulating sapphire or AlN substrates to realize vertical devices for UV light-emitting devices.…”