LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 An
DOI: 10.1109/leos.2000.893938
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High power and high reliability InGaAs broad area lasers emitting between 910 and 980 nm

Yao Zou
1
,
Erik Zucker2,
K. Uppal3
et al.
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High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging

Wang,
Jha,
Baxamusa
et al. 2024
IEEE J. Quantum Electron.
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High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging

Wang,
Jha,
Baxamusa
et al. 2024
IEEE J. Quantum Electron.
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High-power high-efficiency 910- to 980-nm broad-area laser diodes

Rossin
1
,
Zucker
2
,
Peters
3
et al. 2004
SPIE Proceedings
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Performance and reliability of high power 7xx nm laser diodes

Bao
1
,
Wang
2
,
DeVito
3
et al. 2011
Novel in-Plane Semiconductor Lasers X
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