High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

Ikeda, Nariaki; Kaya, S.; Jiang, Li; Sato, Yoshiaki; Kato, S.; Yoshida, Seikoh

doi:10.1109/ispsd.2008.4538955

Cited by 97 publications

(51 citation statements)

References 12 publications

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“…Figure 7 shows the R on versus L GD . Thanks to low contact resistance (1 Ω⋅mm) and low channel resistance (340 Ω/sq) the R on is low in comparison with the state-ofthe art data [1]. 3 Conclusion For DHFETs, the better electron confinement, the higher AlGaN bandgap and the use of thick buffer layers result in devices with low leakage currents.…”

Section: Resultsmentioning

confidence: 94%

“…Indeed, there are few reports on AlGaN/GaNbased heterostructure field-effect transistors (HFETs) grown on Si for switching applications. Recently, high breakdown voltages are reported on single heterostructure devices (SHFETs) [1][2][3]. In these device structures, GaN buffers with a high resistivity are necessary for a good electrical insulation of the devices from the Silicon substrate, yielding a complete channel pinch-off as well as an efficient off-state high voltage blocking.…”

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confidence: 99%

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High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Visalli

Hove

Derluyn

et al. 2009

Phys. Status Solidi (c)

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We report high breakdown combined with low on‐resistance results on AlGaN/GaN/AlGaN double heterostructure devices (DHFET) grown on 4 inch Silicon substrates. On two fingers devices with gate‐drain distance (LGD) of 8 μm we measured a breakdown voltage (VBD) of 650 V and an on‐resistance (Ron) of 7.2 Ω·mm. We also demonstrated that increasing the buffer thickness and etching deep into the AlGaN buffer layer improve both buffer and device breakdown. Moreover, we have also achieved a high breakdown voltage (580 V) for smaller LGD (5 μm) combined with the lowest reported on‐resistance (6 Ω·mm) for this voltage range. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 94%

mentioning

confidence: 99%

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Visalli

Hove

Derluyn

et al. 2009

Phys. Status Solidi (c)

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“…Recently, it has been demonstrated impressive AlGaN/GaN microwave power HEMTs with high output power capability, as high as 40 W/mm [29]. A major obstacle has been controlling the trap densities in the bulk and surface of the material affecting the performance of these devices by trapping effects though draincurrent collapse [30]. To efficiently operate the transistor at high frequency and high voltage, the drain current collapse must be suppressed and the gate-drain breakdown voltage must be improved.…”

Section: Gan Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

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It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

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“…The emerging gallium-nitride-based power semiconductor device is considered a promising candidate to achieve high-frequency, high-efficiency, and high-power-density power conversion [1]- [17]. Due to the advantages of the material, the GaN HEMT has the features of a wide band gap, high electron mobility, and high electron velocity [1], [2]. Thus a better figure of merit can be projected for the GaN HEMT [3] than for the state-of-the-art Si MOSFETs, which allows the GaN HEMT to switch with faster transition and lower switching loss.…”

Section: Introductionmentioning

confidence: 99%

Application of GaN Devices for 1 kW Server Power Supply with Integrated Magnetics

Lee¹,

Li²,

Liu³

et al. 2016

CPSS TPEA

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Abstract-In today's power electronics products, quality and reliability are given. Great emphases are placed on high efficiency, high power density and low cost. With recent advances made in gallium nitride power devices (GaNs), it is expected that GaNs will make significant impacts to all three areas mentioned above. Thanks to the absence of reverse recovery charge and smaller junction capacitances, the turnon loss of GaN is significantly reduced and Turn-off loss and driving loss are negligible, for the first time. These desired properties coupled with ZVS techniques will drastically reduce all switching related losses, thus enabling GaN to operate at a switching frequency more than ten times higher than its silicon counterparts. To illustrate the impact of GaN on efficiency, density and even design practice, a 1 kW server power supply is demonstrated which employs an interleaved CRM totem-pole PFC followed with an LLC resonant converter. Both operate beyond 1 MHz. All magnetic components are integrated into PCB with much reduced EMI noises, thus, only a simple onestage EMI filter is required. The system achieves a power density more than 150 W/in 3 , an efficiency above 96%, and much improved manufacturability with minimum labor content.

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High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

Cited by 97 publications

References 12 publications

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Wide Band Gap Semiconductor Devices for Power Electronics

Application of GaN Devices for 1 kW Server Power Supply with Integrated Magnetics

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