High-Power 625-nm AlGaInP Laser Diode

Shimada, N.; Ohno, Akihito; Abe, Shinji; Miyashita, M.; Yagi, T.

doi:10.1109/jstqe.2011.2121895

Cited by 11 publications

(6 citation statements)

References 8 publications

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“…Recently, aluminum nitride (AlN) heatsink is applied to high power AlGaInP laser diodes to achieve both low cost and high reliability performance [ 73 ]. The calculation method of the temperature rising in the active layer is described in Appendix A .…”

Section: Resultsmentioning

confidence: 99%

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Hamada

2017

Materials

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Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

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Section: Resultsmentioning

confidence: 99%

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Hamada

2017

Materials

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“…The green‐gap is not only a problem for LEDs, but also for LDs. Figure shows the power conversion efficiency versus wavelength for the best reported InGaN and AlInGaP LDs that shows a lack of efficient emitters at green‐gap wavelengths. The congruent green‐gap problem in LDs and LEDs is of no surprise, because the spontaneous emission rate which limits LEDs is related to optical gain which limits LDs.…”

Section: Discussionmentioning

confidence: 99%

Advantages of III‐nitride laser diodes in solid‐state lighting

Wierer

Tsao

2015

Physica Status Solidi (a)

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III‐nitride laser diodes (LDs) are an interesting light source for solid‐state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light‐emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor‐converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.

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“…A secondary enclosure (8), at atmospheric pressure and sealed against air currents, contains a diffraction grating (9) in the Littrow configuration, with the first order diffracted beam returning to the laser diode and the zeroth order beam reflecting off a mirror (10) and exiting the enclosure through another window. The mirror and grating are positioned on a two-axis adjustable mount (11), which allows independent tuning of the grating angle in the horizontal direction for wavelength selection and vertical direction for optical feedback adjustment.…”

Section: A Mechanical Designmentioning

confidence: 99%

“…Applications for lasers of these wavelengths (often in combination with frequency doubling) include slowing, cooling, trapping, and quantumstate-preparation of several different species of diatomic molecules [1][2][3][4] as well as laser cooling of beryllium ions for quantum information processing. 5,6 Techniques that have been previously employed to construct lasers in the 620 nm range include frequency doubling, 7,8 custom-fabrication of semiconductor materials, 9 and cryogenic cooling, 10 but these methods are typically costly and highly dependent on the specific final lasing wavelength. Alternatives to diode lasers include dye lasers, which operate at high power for many red wavelengths 11 but are maintenance-intensive, and optical parametric oscillators, which are broadly tunable across the visible spectrum 12 but are expensive to manufacture.…”

Section: Introductionmentioning

confidence: 99%

A low-temperature external cavity diode laser for broad wavelength tuning

Tobias

Rosenberg

Hutzler

et al. 2016

Review of Scientific Instruments

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We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to −64 • C, more than 85 • C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation was achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers and extending the wavelength coverage of commercial laser diodes.

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High-Power 625-nm AlGaInP Laser Diode

Cited by 11 publications

References 8 publications

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Advantages of III‐nitride laser diodes in solid‐state lighting

A low-temperature external cavity diode laser for broad wavelength tuning

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