High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

Asano, T.; Takeya, M.; Tojyo, T.; Mizuno, Takashi; Ikeda, S.; Shibuya, Katsuyoshi; Hino, T.; Uchida, Shiro; Ikeda, Masao

doi:10.1063/1.1478157

Cited by 46 publications

(33 citation statements)

References 8 publications

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“…The ridge depth was adjusted to yield a θ ʈ of 9°. A GaInN-interlayer was inserted as an optical guiding layer, contributing to an improvement in laser characteristics [11]. A 1.4-µm-wide ridge stripe was formed on the ELO wing regions, and this ridge stripe was covered with a stacked layer of Si on SiO 2 to obtain high kink-free output power [9].…”

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confidence: 99%

Degradation in AlGaInN lasers

Takeya¹,

Mizuno²,

Sasaki³

et al. 2003

phys. stat. sol. (c)

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Degradation experiments for AlGaInN-based laser diodes were conducted for the purpose of constructing a possible model of the degradation mechanism. Lasers in this experiment were aged under 30 mW continuous-wave operation at 60 °C, and the lifetime was defined as the time at which the operating current increased by 20%. The lifetime was found to be dependent on the dislocation density of the basal ELOGaN layer, with the degradation rate being almost proportional to the square root of aging time. A model of degradation in which degradation is governed by a diffusion process is proposed based on these results. Although the model describes the experimental findings well, further investigation is considered necessary before the degradation mechanism in AlGaInN lasers can be fully understood.

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confidence: 99%

Degradation in AlGaInN lasers

Takeya¹,

Mizuno²,

Sasaki³

et al. 2003

phys. stat. sol. (c)

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“…However, AlGaN single EBL with high Al content induces strain in the active layer, degrading the emission efficiency of InGaN active layer. Asano et al reported that the InGaN interlayer can be inserted between the active layer and the AlGaN electron blocking layer to reduce this strain [7]. This high strain induced from AlGaN electron blocking layer is also one of the major factors to affect the poor properties of LD.…”

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confidence: 95%

Carrier confinement effect enhanced by AlGaN/GaN multi‐quantum barrier in AlInGaN based high power blue‐violet laser diodes

Lee

Cho

et al. 2006

Phys. Status Solidi (c)

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PACS 42.55. Px, 42.60.Lh, 78.67.De AlGaN/GaN multi-quantum barriers (MQBs) were firstly introduced into violet AlInGaN laser diodes with InGaN multi-quantum wells structure, resulting in drastic improvements in lasing performance. Comparing with conventional AlGaN single electron blocking layer (EBL), lower threshold current and higher slope efficiency at room temperature could be achieved by AlGaN/GaN multiquantum barrier. It can be explained that p-type AlGaN/GaN MQBs is more effective to suppress the overflow of electron than single p-type AlGaN EBL by the increase of effective barrier heights due to the quantum effect of MQB and the enhancement of p-type doping efficiency. Additionally, the strain effect in InGaN multiquantum wells (MQWs) from single p-type AlGaN EBL can be reduced by forming the AlGaN/GaN super lattice structure. 1 Introduction High power AlInGaN-based blue-violet laser diodes (BV-LDs) have attracted great attention as light sources for high-density optical storage systems. Recently, remarkable progress on the development of BV-LD has been made by some research groups. Nichia and Sony reported the development of commercial grade AlInGaN-based BV-LDs [1-3]. In designing a high power laser suitable for use in optical disk systems, research on AlInGaN violet laser diodes is attracting great interest in high power operation and high temperature operation. In realizing these destinations, one of the major problems is the suppression of carrier overflow from the active layer into the p-layer [4]. In the AlGaInP system, Iga et al. proposed the so-called multi-quantum barrier (MQB) structure, consisting of several periods of thin wells and barriers, and they were located between the active layer and the p-cladding layer of LDs to prevent electrons from overflowing [5]. Several researchers adopted the MQB structure with laser diodes and were able to improve laser performance [5,6]. In this study, p-type AlGaN/GaN multi-quantum barriers (MQBs) implemented above the active layer have been successfully employed to improve the threshold current in 405 nm wavelength AlInGaN laser diodes for the first time.

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“…In comparison to the Al x Ga 1Àx N buffer layers, the use of In x Ga 1Àx N waveguides could be difficult because their fabrication requires a low growth temperature which may limit the smoothness of the epitaxial surface. Nevertheless, laser-diodes whose waveguides contain In x Ga 1Àx N have recently been fabricated and their improved performance was demonstrated [8,9].…”

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confidence: 99%

Coupling of optical modes in GaN‐based laser‐diodes

Einfeldt

Figge

Böttcher

et al. 2003

phys. stat. sol. (c)

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The optical waveguiding in GaN-based laser-diodes grown on sapphire substrates is investigated. Modes mainly guided either in the GaN buffer layer or between the AlGaN cladding layers interact with each other. This results in minima of the confinement factor at periodic intervals of the buffer layer thickness and in a multi-peak far field distribution. It is shown that the mode coupling can hardly be suppressed by a variation of either the thickness or the composition of the AlGaN cladding layers. Instead, the use of an AlGaN buffer layer or an InGaN waveguide is suggested.

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High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

Cited by 46 publications

References 8 publications

Degradation in AlGaInN lasers

Degradation in AlGaInN lasers

Carrier confinement effect enhanced by AlGaN/GaN multi‐quantum barrier in AlInGaN based high power blue‐violet laser diodes

Coupling of optical modes in GaN‐based laser‐diodes

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