High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Umeda, Hidekazu; Yamada, Y.; Ken-ichi, Asanuma; Kusama, Fumito; Kinoshita, Yusuke; Ueno, Hideki; Ishida, Hideyuki; Hatsuda, Tetsuo; Ueda, T.

doi:10.1109/apec.2018.8341119

Cited by 34 publications

(16 citation statements)

References 3 publications

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“…15(a)). Hence, the four gate signals s Ti,lp and s Ti,ln are generated according to a current sign dependent multi-step commutation strategy [23], as illustrated in the lower part of Fig. 17(b) and (c) for the case of i dc > 0.…”

Section: Discussionmentioning

confidence: 99%

“…The power devices selected for the realization of the 3-Φ inverter are ±600 V 26 mΩ 2G MB GaN e-FETs [23]. The main characteristics of this switch (currently only available as research sample) are compared in Table II with the ones of the best-in-the-market conventional GaN power transistor in the same voltage class, i.e., a 650 V 25 mΩ GaN e-FET [42].…”

Section: A Dual-gate Monolithic Bidirectional Gan E-fetmentioning

confidence: 99%

“…In particular, ±600 V 26 mΩ research samples of a dual-gate (2G) MB GaN e-FET [22] are available from a major manufacturer of power semiconductors. Preliminary tests on these devices are performed in [23], however, their potential in a 3-Φ bB CSI system still remains unclear.…”

Section: Introductionmentioning

confidence: 99%

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Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

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Latest dual-gate (2G) monolithic bidirectional (MB) gallium nitride (GaN) enhancement-mode field effect transistors (e-FETs) enable a performance breakthrough of current DC-link inverters, e.g., in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can replace the two anti-series connected conventional power semiconductors required in this inverter topology, realizing a four-quadrant (AC) switch with bidirectional voltage blocking capability and allowing controlled bidirectional current flow. Furthermore, as shown in this paper in case of three-phase (3-Φ) buck-boost (bB) current source inverter (CSI) systems comprising a DC-link current impressing buck-type DC/DC input stage and a subsequent boost-type 3-Φ current DC-link inverter output stage, a variable DC-link current control strategy, based on aSynergetic Control concept, can be applied to significantly reduce the switching losses occurring in the 3-Φ inverter. This strategy is denominated two-third pulse-width modulation (2/3-PWM), since by properly shaping the DC-link current with the input stage, the desired 3-Φ sinusoidal load phase currents can be generated by switching, in each switching period, only two out of the three phases of the output stage. Based on comprehensive circuit simulations and analytical calculations, a detailed explanation of the developed modulation and control schemes in different operating conditions is provided, and the reduction of losses enabled by 2/3-PWM is confirmed. Next, the seamless transition of the 3-Φ bB CSI system from 2/3-PWM to conventional 3/3-PWM is demonstrated. Finally, a 3.3 kW 3-Φ bB CSI system, applying 2/3-PWM and employing research samples of 2G MB GaN e-FETs in the 3-Φ inverter, is estimated to achieve an efficiency of 98.4% and a power density of 18 kW/dm 3 (295 W/in 3 ) at a switching frequency of 140 kHz. Index Terms-Dual-gate (2G) monolithic bidirectional (MB) gallium nitride enhancement-mode field-effect transistors (e-FETS), three-phase buck-boost current source inverter system, variable DC-link current control. in 2001, all inElectronic Engineering. In 1991, he joined Panasonic Corporation, Osaka, Japan, where he was engaged in the research and development of GaAs HFETs, HBTs, and GaAs MMICs. Since 2003, is involved in the research on GaN-based semiconductor devices. He authored or coauthored more than 60 technical papers in international journals and conference proceedings. He submitted more than 60 patents on semiconductor devices and on their process technologies. His current interest is on GaN-based bidirectional switches and on their applications.

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Section: Discussionmentioning

confidence: 99%

Section: A Dual-gate Monolithic Bidirectional Gan E-fetmentioning

confidence: 99%

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Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

Self Cite

View full text Add to dashboard Cite

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“…This effectively addresses the problem of having two semiconductor devices (transistors or diodes) in series with the current path, resulting in reduced conduction losses. A matrix converter with 98% efficiency using GaN Bidirectional switches has been demonstrated in [156] where the characteristics of this switch are compared to the typical IGBT + Diode-based switch. As briefly approached on this work, developments on semiconductor technologies will have significant impact on the successful industrial penetration of matrix converterbased solutions for the promising future applications described throughout this work, to tackle the MC main challenges of higher efficiency and higher voltage operation capability.…”

Section: Challenges and Research Needs Of Matrix Convertersmentioning

confidence: 99%

On the Potential Contributions of Matrix Converters for the Future Grid Operation, Sustainable Transportation and Electrical Drives Innovation

et al. 2021

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Matrix converters have been extensively investigated in academia over the last 3 decades. Several review works targeting matrix converter topologies, commutation strategies, modulation and control techniques have been published. However, to the best of the authors’ knowledge, a review on the potential contributions of matrix converters for applications that are shaping the electric power sector transition towards decarbonization is lacking, namely applications on smart grids, sustainable transportation and electrical drives. This paper presents an extensive literature review on the more relevant research works targeting applications of matrix converters as an enabling key technology for smart and resilient grids, sustainable transportation, and innovation in variable speed electric drives.

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“…In relation to the BDS conformed by two IGBTs, the common-emitter configuration is preferred instead of the common-collector because of implementation issues, as established in [1]. Another BDS configurations based on new power transistor technologies like Gallium Nitride (GaN), Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistors (Sic-MOSFETs), Silicon carbide Junction Field-Effect Transistors (Sic-JFETs), etc., have been recently proposed, but it is still necessary to utilize a two-transistor configuration [5][6][7][8]. The BDS control in the MC represents a fundamental task due to the lack of a natural freewheeling path for the electrical current; therefore, the commutation must be actively controlled all the time to overcome undesirable and destructive conditions, as those that will be described below.…”

Section: Introductionmentioning

confidence: 99%

Four-Step Current Commutation Strategy for a Matrix Converter Based on Enhanced-PWM MCU Peripherals

et al. 2019

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In this paper, an efficient implementation of the four-step current commutation technique for controlling bidirectional power switches in a Matrix Converter (MC) is proposed. This strategy is based on the enhanced pulse width modulation peripheral included in the C 2000 Delfino 32-bit microcontroller of Texas Instruments. By tuning the algorithmic parameters contained in this module, the four-step commutation process is carried out on the Microcontroller Unit (MCU) without overloading the full complex processor and avoiding the use of additional special hardware such as Field-Programmable Gate Arrays (FPGA) or Complex Programmable Logic Devices (CPLD) when controlling the MC. The algorithm is implemented on the TMS320F28379D MCU and operationally validated on an MC prototype, where the functionality of the proposal is demonstrated.

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High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Cited by 34 publications

References 3 publications

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

On the Potential Contributions of Matrix Converters for the Future Grid Operation, Sustainable Transportation and Electrical Drives Innovation

Four-Step Current Commutation Strategy for a Matrix Converter Based on Enhanced-PWM MCU Peripherals

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