High PME Sensitivities by Optical Polishing of Germanium Surfaces

Boatright, A.; Merkl, Walter A.; Mette, Herbert

doi:10.1063/1.1717750

Cited by 3 publications

(1 citation statement)

References 4 publications

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“…[1][2][3][4][5][6][7][8] For an element, alloy or compound, a function T(N) describes qualitatively variations of critical temperature T e with average number of valence electrons per atom, N. This considers all electrons outside a rilled shell. N is often referred to as an electron-atom ratio {eja) or valence-electron concentration.…”

Section: Introductionmentioning

confidence: 99%

Solute Size and Valence Effect in Some Superconducting Alloys of Transition Elements

DeSorbo

1965

Phys. Rev.

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The use of the concept of an effective electron-atom ratio, iV^ff, which contains a solute size correction (rather than the usual ratio N used in Matthias' rule), introduced earlier in correlating superconducting critical temperatures of some dilute solutions of transition elements of the 4th, 5th, and 6th columns in niobium, has been extended to include some other transition-metal solutes of columns 7, 8, 9, and 10 in niobium. The concept has also been tried on some other transition-metal solid solutions of wider range of composition. For these latter alloys the analysis reveals that peaks in the curve of T e versus electron-atom ratio occur at iV e ff~4.4 and ~6.6, whereas with the uncorrected electron-atom ratio, these peaks tend to occur near iV~4.7 and ~6.4. The variation of E e i with iV e ff for alloys of transition metals of columns 4 and 5 suggests that the maximum values of H C 2 also occur near iV e ff »4.4. Both peaks in T e versus N e tt and H C 2 versus iV e ff seem to be independent of whether the solvent or solute atom is in the 3d, 4d, or Sd series.

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Section: Introductionmentioning

confidence: 99%

Solute Size and Valence Effect in Some Superconducting Alloys of Transition Elements

DeSorbo

1965

Phys. Rev.

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Photoelectromagnetic effect in semiconductors and its applications

Nowak

1987

Progress in Quantum Electronics

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Photomagnetoelectric Effect in Thinp-Type Silicon Crystals

Mette¹,

Boatright²

1965

Phys. Rev.

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When the data are presented in terms of an effective electron-atom ratio, there is an apparent shift in the position of the peak of the curve to a value iV e ff less than 4.7, probably close to 4.4, for the V-Ti system; and an apparent shift in the peak from 6.4 to 6.6 for the Mo-Re system. The physical significance of this is not clear.The influence of effective valence on resistivity of some of these transition-metal alloys has already been cited. 15 SUMMARY 1. The change in electron-atom ratio iV e ff, which includes a solute size correction to determine an effective valence of the solute in a transition-metal matrix such as niobium, reveals a linear relationship with T c for dilute alloys of niobium with transition-metal solutes selected from columns 4 through 10 of the periodic table.2. For transition-metal alloys of columns 4 and 5 and 38 C.

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High PME Sensitivities by Optical Polishing of Germanium Surfaces

Cited by 3 publications

References 4 publications

Solute Size and Valence Effect in Some Superconducting Alloys of Transition Elements

Solute Size and Valence Effect in Some Superconducting Alloys of Transition Elements

Photoelectromagnetic effect in semiconductors and its applications

Photomagnetoelectric Effect in Thinp-Type Silicon Crystals

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