High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt

Yuan, Bo; Zheng, Xue; Chen, Yiqiang; Ye, Bo; Zhang, Tong

doi:10.1016/j.sse.2010.09.002

Cited by 56 publications

(14 citation statements)

References 21 publications

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“…The photosensitivity exhibits the same behavior for the asdeposited and annealed samples, which increases as T s increases to reach the maximum values of 8.98 9 10 3 and 12.51 9 10 3 % at 300°C before and after annealing, respectively. This result is higher than that obtained by Chen et al [41] (S = 11.72 9 10 3 %) for the ZnO thin films prepared by sol-gel on quartz substrate after annealing at 650°C for 1 h in pure oxygen atmosphere using IrO 2 as spiral electrodes, and comparable with that obtained by Yuan et al [40] for single ZnO nanobelt (S = 1.15 9 10 4 %) using a bias voltage of 5 V. The photosensitivity decreased with further increase of T s to reach 73 and 36.71 9 10 2 % for the as-deposited and annealed samples, respectively. Overall, the photosensitivity of all the samples increased after annealing (approximately two order of magnitude for the sample deposited at 400°C), to provide more evidence for improved photosensitivity after annealing.…”

Section: Resultssupporting

confidence: 70%

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Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Al-Salman

Abdullah

2014

Acta Metall. Sin. (Engl. Lett.)

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Undoped ZnO nanostructures were deposited on SiO 2 /Si substrates via radio frequency magnetron sputtering at different deposition temperatures (room temperature, 200, 300, and 400°C). The prepared samples were annealed at 500°C for 2 h under an N 2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing (3.22-3.28 eV) decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400°C after annealing with a leakage current of 0.17 lA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300°C, has 12.51 9 10 3 % photosensitivity, 2.259 lA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensitivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.

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Section: Resultssupporting

confidence: 70%

“…5), leading to the formation of an enhanced depletion layer formed around the crystallite surface boundaries by adsorbing extra oxygen molecules in the dark environment. The photosensitivity(S) of the photodetectors can be defined using the following equation [39,40]:…”

Section: Resultsmentioning

confidence: 99%

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Al-Salman

Abdullah

2014

Acta Metall. Sin. (Engl. Lett.)

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“…A surface depletion region exists, and electron-hole separation occurs because of the formation of a built-in electrical field near the surface. Moreover, the high concentrations of shallow Ga donors results in high concentration of free electrons, which significantly reduce the width of the surface depletion region according to the following formula: 55,56 …”

Section: Performance Of Uv Photosensors With Al- Ga- and In-doped Zmentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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“…Another interesting study that utilised a single nanobelt as a UV photoconductive sensor was conducted by Yuan et al (Yuan et al, 2011). The nanobelt has a very similar structure as the nanorod, except the nanobelt exists in a box-like dimension where it has height (nanobelt thickness), width and length.…”

Section: Ultraviolet Photoconductive Sensor Using Zno Nanomaterialsmentioning

confidence: 99%

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

Mamat¹,

Khusaimi²,

Musa³

et al. 2012

Nanorods

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High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt

Cited by 56 publications

References 21 publications

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

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