High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

Candini, Andrea; Martini, Leonardo; Chen, Zongping; Mishra, Neeraj; Convertino, Domenica; Coletti, Camilla; Narita, Akimitsu; Feng, Xinliang; Müllen, Kläus; Affronte, Marco

doi:10.1021/acs.jpcc.7b03401

Cited by 46 publications

(44 citation statements)

References 38 publications

(93 reference statements)

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“…We will address in the next session the differences related to the use of different GNR widths. The room-temperature source-drain current vs. source-drain bias (ISD vs. VSD) curves in Figure 6a show a non-linear and asymmetric behaviour, that is a common feature in electrical devices made of bottom-up synthesized GNRs [34], [36], [44] . The reason is that the contact resistance between the GNR and the electrodes is high, with the presence of a significant Schottky-type injection barrier leading to a non-Ohmic behaviour.…”

Section: Resultsmentioning

confidence: 97%

“…Along with the development of the synthetic processes, the electrical characterization of the bottom-up fabricated GNRs is also steadily developing, from the characterization of films and networks of GNRs [32], [33] to device integration of single (or few) ribbons [34] [35] . In this context, we have recently reported the use of graphene as a suitable electrode material for GNR-based FET and photosensor devices [24], [36] , thus realizing all-graphene monolithic circuits [37] . In our approach the as-fabricated GNR film is transferred directly onto the graphene electrodes without the need of any further fabrication step.…”

Section: Introductionmentioning

confidence: 99%

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Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Martini

Chen

Mishra

et al. 2019

Carbon

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Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics.

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Martini

Chen

Mishra

et al. 2019

Carbon

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“…The novel phototransistor type device, with GNRs as the channel material and multilayer graphene as the electrodes, shows high ON‐state currents and FET behavior. The reduced contact resistance at the GNR/graphene interface leads to a high ON/OFF current modulation up to ≈10 4 for V sd of −0.5 V. The device possesses a remarkably high photoresponsivity of ≈5 × 10 5 A W −1 , with the bias and gate voltage fixed at 1 and 0 V. The device achieves a specific detectivity ( D *) of ≈3 × 10 11 Jones with a fixed V g of −10 V. The current has a fast rise time of ≈25 ms and a quick decays time of ≈75 ms . Single‐wall carbon nanotube (SWNT), another important allostrope of carbon, also exhibits its advantages in optoelectronic field .…”

Section: Phototransistor Type Photodetectors Based On P‐type Materialsmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

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“…In recent years, GNRs have been extensively investigated as promising building blocks for nanoelectronics and spintronics . Moreover, the electronic properties of GNRs can be modulated at atomic level by changing width of AGNRs, “doping” with heteroatoms and formation of heterojunctions .…”

Section: Tuning the Electronic Propertiesmentioning

confidence: 99%

Tuning the Electronic Properties of Atomically Precise Graphene Nanoribbons by Bottom‐Up Fabrication

et al. 2020

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Graphene, a monolayer of graphite, is predicted to be one of the most promising materials to replace silicon in future electronic instruments. Despite its extraordinary electronic and thermal properties, the lack of an electronic band gap severely hampers its potential for applications in digital electronics. In contrast, narrow stripes of graphene, so called graphene nanoribbons (GNRs) are semiconductors, due to the quantum confinement with the tunable band gap by variation with the width and edge structure that is armchair, zigzag or the combination of both edges. This review covers the recent progress in bottom‐up approaches based on the surface‐catalyzed assembly of molecular precursors and tuning of the electronic properties of GNRs by fabricating atomically precise GNRs of different widths, various edge structures as well as doped structures. In addition, this review also indicates the challenges ahead and possible promising ways to finely tune the electronic structures of GNRs through slight modifications of the molecular configurations of the precursors.

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High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

Cited by 46 publications

References 38 publications

Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Tuning the Electronic Properties of Atomically Precise Graphene Nanoribbons by Bottom‐Up Fabrication

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