High-Performance μ-Thermoelectric Device Based on Bi2Te3/Sb2Te3 p–n Junctions

Vieira, E. M. F.; Pires, Ana L.; Silva, José; Magalhães, Vítor; Grilo, José; Brito, F. P.; Silva, M. F.; Pereira, A. M.

doi:10.1021/acsami.9b13254

Cited by 45 publications

(24 citation statements)

References 44 publications

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“…They can exhibit different characteristics that depend on the substrates they grow onto. As for examples, Sb 2 Te 3 films coated onto Bi 2 Te 3 are observed to behave as a planer thermoelectric generator 8 . n-Bi 2 Te 3 /p-Sb 2 Te 3 heterojunctions which are prepared onto Kapton substrates generated open circuit voltage of 0.21 V and output power of 3.3mW/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

2021

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InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb 2 Te 3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique. The structural, optical, dielectric and photoelectric properties of InSe/Sb 2 Te 3 heterojunctions are explored by X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The structural analyses revealed the preferred growth of polycrystalline hexagonal Sb 2 Te 3 onto amorphous InSe as a major phase. Optically, the coating of Sb 2 Te 3 onto InSe enhanced the light absorbability of InSe by more than 18 times, redshifts the energy band gap, increased the dielectric constant by ~5 times and increased the optical conductivity by 35 times in the NIR range of light. A conduction and valance band offsets of 0.40 and 0.68 eV are determined for the InSe/Sb 2 Te 3 heterojunction devices. In addition, the Drude-Lorentz fittings of the optical conductivity indicated a remarkable increase in the plasmon frequency values upon depositing of Sb 2 Te 3 onto InSe. The illumination intensity and time dependent photocurrent measurements resulted in an enhancement in the photocurrent values by one order of magnitude. The response time of the devices is sufficiently short to nominate the InSe/Sb 2 Te 3 heterojunction devices as fast responding NIR sensors suitable for optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

2021

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“…Harvesting this energy by using smart textiles can be a promising method to feed on-body electronics. Two very important working mechanisms used to harvest body heat energy are the pyroelectric effect [227] , [228] and thermoelectric effect [229] , [230] , [231] . The pyroelectric effect is based on the temperature differences with respect to time whereas the thermoelectric effect is based on temperature differences with respect to space.…”

Section: Harvesting Human Energy For Electronic Applications Through ...mentioning

confidence: 99%

Applications of nanotechnology in smart textile industry: A critical review

Shah

Pirzada

Price

et al. 2022

Journal of Advanced Research

158

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“…Hence, doping, alloying, and material processing are vital in improving the device quality of bismuth chalcogenides at a desired temperature. 197…”

Section: Effect Of Point Defect and Effective Mass (M * ) On Carrier ...mentioning

confidence: 99%

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Hegde

Prabhu

2022

J. Electron. Mater.

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One of the global demands of primary research objectives is to achieve human energy harvesting and self-powered wearable technologies. Bismuth chalcogenides are the trending materials for thermoelectric generators and Peltier coolers due to their notable thermoelectric figure of merit in the low- and room-temperature range. Systematic alloying of bismuth chalcogenides leads to a substantial change in their electrical and thermal transport properties. The high thermoelectric figure of merit (ZT) observed in bismuth chalcogenides is due to the rhombohedral crystal structure, lower effective mass, low thermal conductivity, and large band degeneracy. This review is aimed at identifying and quantifying different techniques for effectively improving the thermoelectric properties of doped/composite bismuth chalcogenide compounds. The review also examines the various synthesis methods including ball milling (BM), spark plasma sintering (SPS), self-propagating high-temperature synthesis (SHS), soft chemical reaction, hydrothermal reaction, melt growth (MG), melt spinning (MS), sintering and consolidated synthesis, and hot extrusion, with their respective figures of merit. Since device modification is a challenging task, this report reviews the present research on bismuth chalcogenide alloys to benchmark future development using various techniques. Graphical Abstract

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High-Performance μ-Thermoelectric Device Based on Bi₂Te₃/Sb₂Te₃ p–n Junctions

Cited by 45 publications

References 44 publications

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

Applications of nanotechnology in smart textile industry: A critical review

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

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