High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C

Abstract

In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 ℃. Interestingly, the ZnO TFTs exhibit superior electrical properties, including a field-effect mobility of 14.32 cm 2 V -1 s -1 , a sub-threshold swing of 0.21 V/decade, and an on-to-off current ratio of 3.03 × 10 7 . Also, ideal uniformity, hysteresis property, contact resistance, and stability are achieved. Threshold voltage shift (VTH) under positive and negative bias stress are 0.17 and -0.18 V, respectively. Moreover, the ZnO TFTs manifest good mechanical performance at a bending radius of 10 mm. We expect that our findings propel practical application of the oxide TFTs in flexible electronics.

Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways

“…Further, the Al-capped flexible device shows excellent mechanical stability even for a small radius of curvature of 1 mm (Figure S7). Despite the prototype device being fabricated without a buffer layer, our flexible device shows superior bending reliability even under severe bending conditions compared to other oxide-based flexible devices, − as shown in Figure d. Our polymer dielectric device exhibits robust properties on the flexible substrate, which can be attributed to the high modulus of elasticity of the PPx-C dielectric layer.…”

The influence of Pt islands on the failure of Pt thin film on a flexible PET substrate

“…The flexible substrates usually include polyethylene terephthalate (PET) [6], polyimide (PI) [7], and paper [8], which provide a durable, lightweight, and flexible platform for incorporating active electronic components, such as transistors and sensors. Among them, PET is the most common material used due to its excellent combination of mechanical and thermal stability, flexibility, and low cost [6,[9][10][11][12][13].…”

Effects of Ambience on Thermal-Diffusion Type Ga-doping Process for ZnO Nanoparticles

“…Gao et al published a comprehensive review of doped ZnO, and summarized that the Ga-doped ZnO achieves a low resistive NP layer and improves electrical properties compared to various doping elements [13]. Various techniques have been used to prepare ZnO thin films [14], such as magnetron sputtering [15], chemical vapor deposition (CVD)/atomic layer deposition (ALD) [16][17][18][19], and chemical solution deposition (CSD), including the sol−gel method [20]. These deposition methods are vacuum-based deposition processes and are suitable for forming thin films.…”