High‐performance W‐band MMIC mixer module using GaAs metamorphic HEMT

Abstract

In this letter, we report on a high‐performance 94‐GHz millimeter‐wave monolithic integrated circuit (MMIC) mixer module using 0.1‐μm metamorphic high electron mobility transistors. A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO‐RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW‐waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 and 9.5 dB, and LO‐RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W‐band (75–110 GHz) MMIC mixers. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:815–817, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25081