High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure

Du, Shiyu; Yu, Naisen; Lin, Xiang; Liu, Benkang; Wu, Yunfeng; Li, Haiou

doi:10.1016/j.physe.2022.115398

Cited by 7 publications

(2 citation statements)

References 33 publications

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“…Amorphous Ga 2 O 3 has the advantages of low preparation temperature, no need to consider lattice mismatch issues, a wide range of substrate choices, and low difficulty in large-area film formation. It holds great potential in flexible devices and large-area image sensors [13] . However, issues such as high dark current, significant persistent photoconductivity effects, and low carrier mobility affect the optical detection capabilities (e.g., low detection rate, delayed response time, and responsiveness).…”

Section: Introductionmentioning

confidence: 99%

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction

2024

AJMC

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The day-blind ultraviolet detector has been widely recognized due to its enormous potential in military and civilian applications such as missile tracking, flame detection, and electrical grid security. In comparison to the narrow bandgap semiconductor material Si, amorphous Ga 2 O 3 is possessed of an ultra-wide bandgap, high-temperature resistance, high-pressure resistance, and the advantage of lowtemperature and low-cost preparation, making it an ideal material for day-blind ultraviolet detectors. In this study, sol-gel and magnetron sputtering methods were employed to fabricate Ga 2 O 3 /ZnO heterojunction deep ultraviolet detectors. Compared to pure Ga 2 O 3 detectors, a reduction in dark current by an order of magnitude was observed in the Ga 2 O 3 /ZnO heterojunction detectors. The photocurrentto-dark current ratio increased by approximately 50 times, and the responsiveness increased by nearly an order of magnitude, resulting in a lower detection rate. This improvement can be attributed to the Ga 2 O 3 /ZnO heterojunction. Additionally, detector arrays were prepared, and the uniformity of the fabricated thin films was verified.

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Section: Introductionmentioning

confidence: 99%

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction

2024

AJMC

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“…The photoconductor PD is simple, but the photocurrent of PDs is limited by the mobility of the semiconductors . The photovoltaic PD is built upon the foundation of having an in-built charge separation mechanism and has a faster response time − but the detection signal cannot be amplified. In contrast, a three-terminal phototransistor with one more terminal-gate to flexibly control the carrier transport is attractive for UV PDs. − Although Ga 2 O 3 phototransistor PDs have been demonstrated previously, most of them are based on high-cost mechanical exfoliated single-crystal Cr-doped Ga 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga₂O₃ Heterojunction Channels

Deng

Huang

et al. 2023

ACS Appl. Mater. Interfaces

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High-performance phototransistor-based solar-blind (200−280 nm) ultraviolet (UV) photodetectors (PDs) are constructed with a low-cost thin-film ZnO/Ga 2 O 3 heterojunction. The optimized PD shows high spectral selectivity (R254/R365 > 1 × 10 3 ) with a photo-to-dark current ratio of ∼10 4 , a responsivity of 113 mA/W, a detectivity of 1.25 × 10 12 Jones, and a response speed of 41 ms under 254 nm UV light irradiation. It is found that the gate electrode of a three-terminal phototransistor can amplify the responsivity and increase the photo-to-dark current ratio because of the different densities of field-induced electrons at different gate biases. In addition, the built-in electric field at the ZnO/Ga 2 O 3 heterojunction interface can control the distribution of the photoinduced electrons and the total conductivity of the heterojunction, which can further enhance device performance. Together with the simple fabrication process, the achieved results suggest that the three-terminal ZnO/Ga 2 O 3 heterojunction phototransistor is a promising candidate for highly sensitive solar-blind PDs.

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n-type Ga2O3–ZnO heaped nanorods: apropos of coupling green route with micro-wave abetted synthesis for advanced energy systems

Jaffri,

Ahmad,

Abrahams

et al. 2023

J Appl Electrochem

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High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure

Cited by 7 publications

References 33 publications

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga₂O₃ Heterojunction Channels

n-type Ga2O3–ZnO heaped nanorods: apropos of coupling green route with micro-wave abetted synthesis for advanced energy systems

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High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure

Cited by 7 publications

References 33 publications

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction

Deep Ultraviolet Detector Based on Low-Temperature Fabricated ZnO/Ga2O3 Heterojunction

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga2O3 Heterojunction Channels

n-type Ga2O3–ZnO heaped nanorods: apropos of coupling green route with micro-wave abetted synthesis for advanced energy systems

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High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga₂O₃ Heterojunction Channels