High‐Performance Ultrathin Molecular Rectifying Diodes Based on Organic/Inorganic Interface Engineering

Batista, Carlos Vinícius Santos; Merces, Leandro; Costa, Carlos Alberto Rodrigues; Camargo, Davi H. S. de; Bufon, Carlos César Bof

doi:10.1002/adfm.202108478

Cited by 11 publications

(8 citation statements)

References 60 publications

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“…We found root mean squares (RMS) of 35.3 and 8.2 nm on SiO 2 NPs and Au, respectively. The latter data agrees with the RMS expected for thin film-coated smooth surfaces . The V CPD values for Au and SiO 2 NP were ∼13.6 and 49.9 mV, respectively, showing that these NPs imply sensitive alterations in the surface potential with the impedimetric responses of the sensor being thus modified.…”

Section: Resultssupporting

confidence: 86%

“…The latter data agrees with the RMS expected for thin film-coated smooth surfaces. 88 The V CPD values for Au and SiO 2 NP were ∼13.6 and 49.9 mV, respectively, showing that these NPs imply sensitive alterations in the surface potential with the impedimetric responses of the sensor being thus modified. V CPD profile obtained along a dotted line on the prior area monitored by AFM clarify these alterations (see Figure 4D).…”

Section: ■ Experimental Sectionmentioning

confidence: 95%

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Real-Time and In Situ Monitoring of the Synthesis of Silica Nanoparticles

et al. 2022

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The real-time and in situ monitoring of the synthesis of nanomaterials (NMs) remains a challenging task, which is of pivotal importance by assisting fundamental studies (e.g., synthesis kinetics and colloidal phenomena) and providing optimized quality control. In fact, the lack of reproducibility in the synthesis of NMs is a bottleneck against the translation of nanotechnologies into the market toward daily practice. Here, we address an impedimetric millifluidic sensor with data processing by machine learning (ML) as a sensing platform to monitor silica nanoparticles (SiO2NPs) over a 24 h synthesis from a single measurement. The SiO2NPs were selected as a model NM because of their extensive applications. Impressively, simple ML-fitted descriptors were capable of overcoming interferences derived from SiO2NP adsorption over the signals of polarizable Au interdigitate electrodes to assure the determination of the size and concentration of nanoparticles over synthesis while meeting the trade-off between accuracy and speed/simplicity of computation. The root-mean-square errors were calculated as ∼2.0 nm (size) and 2.6 × 1010 nanoparticles mL–1 (concentration). Further, the robustness of the ML size descriptor was successfully challenged in data obtained along independent syntheses using different devices, with the global average accuracy being 103.7 ± 1.9%. Our work advances the developments required to transform a closed flow system basically encompassing the reactional flask and an impedimetric sensor into a scalable and user-friendly platform to assess the in situ synthesis of SiO2NPs. Since the sensor presents a universal response principle, the method is expected to enable the monitoring of other NMs. Such a platform may help to pave the way for translating “sense–act” systems into practice use in nanotechnology.

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Section: Resultssupporting

confidence: 86%

Section: ■ Experimental Sectionmentioning

confidence: 95%

Real-Time and In Situ Monitoring of the Synthesis of Silica Nanoparticles

et al. 2022

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“…[ 103 ] Sequentially, Au was deposited on the nanoparticle template, and by exfoliating the PS shadow mask, the authors obtained nanopatterned Au source electrode with a thickness of ≈10 nm. In such devices, the charge carriers must overcome a barrier height between the source electrode and the OSC, [ 442 ] whereas, by keeping a large barrier height between the drain electrode and the OSC, the transport of charge carriers with opposite polarity can be blocked. Upon application of a sufficient V GS , charge carriers are accumulated within the gaps of the nanopatterned Au source electrode, and simultaneous application of V DS results in a vertical transport of charge carriers between the source and the drain electrode.…”

Section: Organic Field‐effect Transistorsmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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According to the forecast of Allied Market Research, the flexible electronics market is projected to reach $42.48 billion by 2027. It is estimated to revolutionize the lighting technology, power integration displays, and health monitoring systems. The popularity of flexible electronics is mainly due to the unique benefits of organic materials and devices that offer cost-effectiveness, low-temperature processability, mechanical softness, and shape adaptability, [5][6][7] which are difficult to obtain with traditional, complementary-metal-oxide-semiconductor (CMOS)-based rigid systems. [8] Over the past two decades, research interest in flexible electronic systems has grown exponentially, driven by the requirements of interface softness and shape adaptability for electronics used in Internet-of-Things (IoT), [9] human-machine interfaces, [10] and advanced healthcare. [11] Although significant progress has been made in academia, the practical application of flexible electronics in the industry is limited. Presently, thin-film photovoltaics and flexible displays mainly contribute to the flexible electronics market, with a noticeable presence held by radio frequency identification (RFID) tags and medical X-ray imagers. [12] Indeed, much of the success of present flexible electronic systems rely on the performance and reliability of thin-film The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET-and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

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“…In 2020, we proposed a novel approach, the rolled-up nanomembrane (NM)-based VOFET, referred to as r -VOFET, which employs a self-rolling NM as the top drain electrode, ensuring a soft and reliable electrical contact between the metal and the OSC ultra-thin film. − Thus far, the r -VOFET platform has one of the shortest conducting channels ( ca . 35 nm) ever reported in the literature .…”

Section: Introductionmentioning

confidence: 99%

Pushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors

Andrade

Merces

Nawaz

et al. 2023

ACS Appl. Electron. Mater.

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Developing high-performance photosensors using prototype device architectures is essential to pushing forward developing and advancing next-generation optoelectronic applications. This work reports an organic phototransistor (OPT) with an ultra-short conducting channel (tens of nanometers) and outstanding photoelectric conversion efficiency. The OPT is based on a vertical organic field-effect transistor (VOFET) architecture, which utilizes a rolled-up metallic nanomembrane (NM) as the drain electrode and a photolithographically patterned (rectangular-shaped) perforated source electrode. These features expand the concept of conventional VOFETs as the former enables the incorporation of ultra-thin active layers and allows reliable control over gate-induced modulation of channel current. Using the engineering as abovementioned strategies, we focused on obtaining an improved device performance, studying their fundamental operating principle, and further investigating their application as photosensors. The optimized devices exhibited low operating voltages (<5 V) and enhanced on/off current ratio (∼105). The VOFET photoresponse was characterized by measuring the electrical characteristics in the dark and under illumination using three different monochromatic light colors. Under blue light, our devices demonstrated impressive photosensitivity (P max ≈ 105) and fast photoelectric conversion (steep light-induced threshold voltage shift), demonstrating that the rolled-up NM OPT shows excellent potential as a highly sensitive photodetector with low power consumption.

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High‐Performance Ultrathin Molecular Rectifying Diodes Based on Organic/Inorganic Interface Engineering

Cited by 11 publications

References 60 publications

Real-Time and In Situ Monitoring of the Synthesis of Silica Nanoparticles

Real-Time and In Situ Monitoring of the Synthesis of Silica Nanoparticles

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Pushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors

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