High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO₂ Gate Insulator on Colorless Polyimide Substrate

Flexible Liquid‐Based Continuous Direct‐Current Tribovoltaic Generators Enable Self‐Powered Multi‐Modal Sensing

“…When the system is static in thermal equilibrium, a unified Fermi level is formed, and there is no net current flowing through the system. Meanwhile, due to the difference in the work function of Pt (Ф Pt ≈5.65 eV) [ 22 ] and IGZO (Ф IGZO ≈4.50 eV), [ 20 ] the semiconductor surface energy band will be bent, resulting in a space charge region and a built‐in electric field similar to a PN junction, as shown in Figure a. The nonlinear I – V curve confirms that there exists a built‐in electric field in the junction, as shown in Figure 2h.…”

“…Herein, we propose a flexible liquid‐based DC generator (FLG) with exceptional stability and performance. In this design, an indium gallium zinc oxide (IGZO) film with excellent film uniformity, mechanical flexibility, and mature process [ 20 ] is adopted as the semiconductor layer in the metal‐liquid‐semiconductor sandwich structure, and polydimethylsiloxane (PDMS) is used to seal and package the generator. A high short‐circuit current ( I sc ) of 9.2 µA, corresponding to a current density of J sc ≈2.3 µA cm −2 , and an open‐circuit voltage of 620 mV, have been achieved by simply shaking or tilting the FLG slightly.…”

Optimizing the photoresponse enhancement in a hybrid inorganic–organic phototransistor with an amorphous indium gallium zinc oxide channel layer and PTCDI-C13 photoactive layer

“…6,7 Amorphous indium gallium zinc oxide (a-IGZO) is one of the most widely researched oxide semiconductors owing to its high intrinsic electron concentration, electrical stability, high mobility, and wide bandgap. [8][9][10][11] A-IGZO thin films can be formed using a range of methods, such as solution processing, 12 atomic layer deposition, 13 and radio frequency (RF) sputtering. 14,15 On the other hand, electronic devices fabricated with as-deposited a-IGZO films often do not offer ideal performance because of issues with the film surface quality or the non-ideal atomic composition.…”

Highly Transparent Aromatic Polyamides from Unsymmetrical Diamine with Trifluoromethyl Groups

“…Unfortunately, commonly used transparent polymeric materials, including poly(ethylene terephthalate) (PET), poly(ethylene naphthalate) (PEN) and polycarbonate (PC), are found to be inappropriate to use as substrate materials for flexible organic light-emitting diode (OLED) displays mainly because it cannot withstand the fabrication conditions currently employed for thin film transistor (TFT) manufacturing [ 3 , 4 ]. For instance, the direct fabrication of transparent and flexible oxide thin-film transistors onto a polymer substrate often requires post thermal annealing and the polymer films should maintain its integrity during the heating process above 300 °C [ 5 , 6 , 7 ]. However, the glass transition and melting temperatures ( T g , and T m ) of the aforementioned polymer films are not high enough for TFT fabrication process [ 8 ].…”