High-Performance Thin-Film IGZO Schottky Diodes With Sputtered PdOₓ Anode

Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation

“…Such hydrogenation also slightly lowered Φ B from 0.72 to 0.70 eV, plausibly due to the generation of a few interface defects. [17– 19 ] As also shown in Figure 2a, the off‐state current density significantly increased by one order and its voltage dependence was also distorted. This is in contradiction with the minor decrease of Φ B .…”

“…As the major native defect in AOSs, oxygen vacancy (V O ) does not only influence the trap states within the bandgap [25,26] but also serves as an internal "donorlike" defect to donate electrons. Thus, the natively oxygen-deficient AOS-metal interface [27] benefits the formation of Ohmic contact [28] but readily damages the Schottky barrier between AOSs and high work function anodes, [17][18][19]27] such as platinum (Pt) and palladium (Pd). Various processes and material optimizations were investigated to obtain a sufficiently oxidized Schottky contact.…”

“…Various processes and material optimizations were investigated to obtain a sufficiently oxidized Schottky contact. [17][18][19][20]27,[29][30][31][32][33][34] Moreover, the Schottky barrier can be deteriorated by the external dopant-induced defects, [31] such as those defects related to hydrogen (H) and water (H 2 O) from the H-containing processes or ambient humidity. Although the hydrogenation of AOS may benefit the rectification performance of SBDs by reducing the on-state resistance (R on ), [33] it is also of high possibility to bring about instabilities due to the H-related defects [35,36] and the thermal instability nature of H dopants.…”

“…As a key semiconductor device in wireless communication, [ 1 ] energy, [ 2,3 ] memory, [ 4,5 ] and optoelectronics [ 6–8 ] applications, the Schottky barrier diode (SBD) is highly desired in the emerging flexible electronics, [ 9,10 ] hybrid integrated circuits (ICs), [ 11,12 ] and even flexible chip. [ 13 ] Thus, various low‐temperature SBDs were developed using novel semiconductors, such as low‐dimensional semiconductors, [ 14–16 ] amorphous oxide semiconductors (AOSs), [ 17–20 ] and organic semiconductors. [ 21,22 ] The history of AOS started from the amorphous indium‐gallium‐zinc oxide (a‐IGZO) invented by Hideo Hosono in 2004, [ 23 ] much less than other counterparts, but the a‐IGZO thin‐film transistor (TFT) has already been successfully applied to the mass production of large‐area displays in 2012 [ 24 ] validating the maturity of AOS materials.…”

Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

“…Such fixed device architecture also restricts the application scopes of AOS SBDs. [32] Considering the native defects in AOSs are closely related to oxygen, diversified interface-oxidizing techniques have been investigated to suppress defects at the Schottky interface between AOSs and anodes, such as platinum (Pt) and palladium (Pd). So far, the fairly great a-IGZO SBDs can be formed by strongly oxidized AOSs, [16][17][18][19][20][21][33][34][35] partially oxidized anode, [17,21,32,36] and postanneal in oxygen.…”