High-reliability and good-performance stacked storage capacitors with high capacitance value of 17.8 fF/m 2 has been realized using low-pressure-oxidized thin nitride films deposited on roughened poly-Si electrodes. This novel electrodes are fabricated by H 3 PO 4 -etched and RCA-cleaned. The leakage current density at +2.5 and 02.5 V are 9:07 2 10 09 and 02:4 2 10 08 A/cm 2 , respectively, fulfilling the requirements of 256 Mb DRAM's. Weibull plots of time-dependent-dielectricbreakdown (TDDB) characteristics under constant current stress and constant voltage stress also show tight distribution and good electrical properties. Hence, this easy and simple technique is promising for future high-density DRAM's applications.