High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

He, Penghui; Lan, Linfeng; Sun, Sheng; Li, Yi‐Zhi; Gao, Peng; Zhang, Peng; Dai, Xingqiang; Wang, Jian; Peng, Junbiao; Cao, Yong

doi:10.1021/acsnano.8b01094

Cited by 27 publications

(20 citation statements)

References 41 publications

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“…Over the years the general concept of multilayer, unipolar LEFETs has been applied to many different hole and electron transport layers (organic and inorganic) as well as different emissive layers, such as organic fluorescent and phosphorescent as well as TADF (thermally activated delayed fluorescence) emitters, and recently even inorganic quantum dots and multiple quantum well perovskites . Two examples of multilayer LEFETs are shown in Figure .…”

Section: Lateral Multilayer and Unipolar Lefetsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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Light-emitting field-effect transistors (LEFETs) combine switching and amplification with light emission and thus represent an interesting optoelectronic device. They are not limited anymore to a few examples and specific materials but are nearly universal for a wide range of semiconductors, from organic to inorganic and nanoscale. This review introduces the basic working principles of lateral unipolar and ambipolar LEFETs and discusses recent examples based on various solution-processed semiconducting materials. Applications beyond simple light emission are presented and possible future directions for lightemitting transistors with added functionalities are outlined. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201905269.thus excluding vertical LEFETs, which have been demonstrated for some organic emitter systems. [5][6][7] We will start with LEFETs that do not rely on the injection of both holes and electrons in a single semiconducting layer but show unipolar charge transport and may include multiple semiconducting layers. This short section will be followed by an overview of truly ambipolar single-layer LEFETs, the different possible working principles and various emissive semiconductors with their advantages and drawbacks. The review will conclude with recent examples of LEFET applications that go beyond simple light-emission and take advantage of specific device properties to add functionalities that are difficult to achieve with other optoelectronic devices.

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Section: Lateral Multilayer and Unipolar Lefetsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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“…Two LEFET devices have just been published in 2018, which were based on CQDs emitting in the visible spectral range. Contrarily to the devices above, in both the work of Liu et al and He et al, the emitting CQDs were sandwiched as in a vertical structure between selective transport layers for electrons and holes in a vertical structure (see Table ). This choice generally offers the advantage of a better carrier injection and the possibility of light emission from a larger area, but cannot reveal the intrinsic material properties of CQDs directly as the structures discussed above can.…”

Section: Qdlefets In the Literaturementioning

confidence: 99%

“…Similarly, also He et al used the structure shown in Figure a, where two gold top contacts were deposited on organic hole injection layers . CQDs were deposited between a PVK (poly(9‐vinylcarbozole)) hole injecting layer and a Sc‐doped indium oxide (SCO) layer used for electron injection.…”

Section: Qdlefets In the Literaturementioning

confidence: 99%

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Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Kahmann

Shulga

Loi

2019

Adv Funct Materials

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In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.channel is separated from the gate by an insulating gate dielectric. Gate electrode, dielectric, and channel form a capacitor that allows for charge accumulation at the channel-dielectric interface, through which the conductivity of the channel is modulated.Most commonly, the semiconducting material in the channel is doped and the FETs work through the conduction of either holes or electrons (unipolar FET). Such FETs are classified according to their working principle into inversion-mode or accumulation mode devices. For example, in n-channel inversion-mode FETs, the channel region is p-doped, and the source and drain regions are n-type semiconductors. By applying a positive gate voltage, the semiconductor at the interface with the gate dielectric inverts from p-type to n-type (inversion layer) and the channel becomes conductive. This mode is the most common operating mode of silicon metal-oxide-semiconductor FETs (MOSFET).The standard characterization of an FET includes the measurement of the output and the transfer characteristics. For the former, the gate voltage V G is constant, and the drain current I D Simon Kahmann received a shared doctorate degree from

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“…Light emitting thin film transistors (LETFTs) have emerged as a promising candidate for the next‐generation electronics due to the dual integration of switching capacity of a transistor and light emission characteristics of a light emitting diode . This unique characteristic of LETFT enhances its application potential in advanced electronics such as electric pump lasers, display pixels, and optical communications .…”

Section: Introductionmentioning

confidence: 99%

Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

Gogoi

Pramanik

Chattopadhyay

2020

Adv Materials Inter

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Ambipolar transport characteristics of thin film transistors fabricated from nontoxic white light emitting quantum dot complexes (QDCs) are herein reported to exhibit efficient carrier mobilities. The QDCs are synthesized by forming bluish green emitting zinc quinolate complex on the surface of orange emitting Mn2+‐doped ZnS quantum dots (Qdots) using 8‐hydroxyquinoline 5‐sulfonic acid as the chelating ligand. The device exhibits efficient ambipolar transport characteristics with high ION/IOFF ratio of 104 and electron mobility and hole mobility of 2.95 × 10−02 and 1.06 × 10−02 cm2 V−1 s−1, respectively. The subthreshold slope of Qdot complex–integrated thin film transistor increases from that of Mn2+‐doped ZnS Qdot–integrated thin film transistor from 0.35 to 0.79 V dec−1 in p‐field effect transistor (FET) and from 0.59 to 0.97 V dec−1 in n‐FET operations, which annotates an increase in trap state density due to surface complexation of the Qdot. These results suggest that white light emitting QDC can be used as an efficient transport as well as an emissive material, which open up new paradigm for advanced optoelectronic applications.

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High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

Cited by 27 publications

References 41 publications

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

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