We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, , of 80 nm had = 79 GHz and max = 212 GHz, while devices with = 70 nm had as high as 92 GHz. The MODFETs displayed enhanced at reduced drain-to-source voltage, ds , compared to Si MOSFETs with similar at high ds .