High performance SiC trench devices with ultra-low ron

Nakamura, Takashi; Nakano, Yoshiaki; Aketa, Masatoshi; Nakamura, Ryota; Mitani, Shujiro; Sakairi, Hiroyuki; Yokotsuji, Y.

doi:10.1109/iedm.2011.6131619

Cited by 215 publications

(150 citation statements)

References 2 publications

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“…Consequently, it is very important to know the nitridation status at the MOS interface. The adoption of a trench MOS gate structure is also regarded as another promising way to reduce on-resistance because of its larger per-unit area gate width compared to a normal planar gate structure [9][10][11][12]. When a trench MOSFET is fabricated on a mass production commercial Si-faced SiC wafer, the MOS channel surface is formed at one of the a-face, m-face, or the face between them.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Hamada

Mikami

Naruoka

et al. 2017

e-J. Surf. Sci. Nanotech.

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It is known that the interface nitrogen density of the 4H-SiC Si-face, C-face, and a-face increases as a result of the NO-POA process, that the electron mobility increases as the nitrogen density increases, and that each face has a different interface nitrogen saturation density. In contrast, the anisotropy of the nitridation characteristics of the m-face, which is regarded as a promising channel for high-performance trench MOSFETs, is not well known. To identify the nitridation status of the m-face after NO-POA, the MOS interface structures with a SiO2 formed on m-face by CVD and treated by NO-POA was investigated by SIMS, HAXPES, XPS, and XAFS. In the same way as the other faces, it was found that the nitrogen segregates on the SiO2/SiC MOS interface, that most of the nitrogen combines with Si, and that the interface nitrogen density has a unique saturation value. The nitrogen density saturation value on the m-face measured by SIMS was 9.8 × 10 14 cm −2 . This value is approximately 1.5 times the exposed carbon density on the top surface of the m-face.

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Section: Introductionmentioning

confidence: 99%

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Hamada

Mikami

Naruoka

et al. 2017

e-J. Surf. Sci. Nanotech.

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“…At the same time, the higher electric field in GaN exposes the gate oxide at the trench corner to very high electric field (reaching 10 MV/cm at breakdown for 1200 V GaN UMOSFET), which can lead to oxide breakdown or hot carrier injection into the gate oxide. In SiC UMOSFETs, the high electric field problem at the trench corner can be mitigated by using a p-type implant under the gate trench or a deep source trench with p-type implant under it [7]. These solutions cannot be easily implemented in GaN due to very low activation efficiency of implanted Mg acceptors.…”

Section: Resultsmentioning

confidence: 97%

Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV

Chowdhury

Guo

Liu

et al. 2016

Phys. Status Solidi C

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In recent years, different power transistors have been developed in silicon carbide (SiC) and gallium nitride (GaN) as replacements for silicon based IGBTs. This paper presents a simulation comparison of the static and dynamic performance of silicon IGBTs with different SiC and GaN based lateral and vertical power transistors (HEMT, MOSFET and IGBT) with breakdown voltage ratings between 1.2 kV to 15 kV. The strengths and weaknesses of different technologies which make them suitable at different voltage levels have been discussed. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…2 (a) [10]. The cell pitch was reduced down to 4-5 μm, by which a record onresistance of 0.79 mΩcm 2 with a blocking voltage of 630 V has been achieved [10]. Fig.…”

Section: Sic Power Devicesmentioning

confidence: 99%

Progress and future challenges of silicon carbide devices for integrated circuits

Kimoto

2014

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference

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Silicon carbide (SiC) is an emerging wide bandgap semiconductor having superior physical properties such as high critical electric field and high saturated drift velocity. Discrete high-voltage, low-loss SiC power devices such as 600-1700 V Schottky barrier diodes and FETs (MOSFETs and JFETs) have currently been developed, and small-scale production has started. SiC is also attractive for advanced integrated circuits operating in high-temperature and radiation-hard circumstances. This paper reviews the present status, future prospects, and technological challenges of SiC devices and circuits.Index Terms -silicon carbide, power device, hightemperature device, MOSFET.

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High performance SiC trench devices with ultra-low ron

Cited by 215 publications

References 2 publications

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV

Progress and future challenges of silicon carbide devices for integrated circuits

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