High‐Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films

Choi, Seungchel; Hong, Sang-Hyun; Cho, Shin Hyo; Park, Samdae; Park, Su‐Moon; Kim, Ohyun; Ree, Moonhor

doi:10.1002/adma.200702147

Cited by 135 publications

(72 citation statements)

References 29 publications

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“…As in copper-ion memories, [73][74][75] mobile metallic ions from the electrodes or the nanoparticles can migrate to form a conductive filament between the two electrodes when a high enough voltage is applied to the device. It has been observed using a current-sensing atomic force microscope [76][77][78][79] and an infrared microscope 80 that only the switching occurred in localized areas of the devices. Highly conductive spots are created after the device is switched to the low conductive state.…”

Section: Filament Formationmentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

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Section: Filament Formationmentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

View full text Add to dashboard Cite

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“…Recently, WORM memory devices have gained rapid development for their potential application for permanently data storage, such as wireless identification tags, smart cards, and personal data depositories. [8][9][10][11][12][13][14][15][16] However, the development of organic WORM memory devices is still in its early stage and high performance devices are desired especially the ones with simple structure and construction process. On the other hand, the mechanisms involved in organic WORM memory devices are still under debate.…”

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confidence: 99%

Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

Wang

2012

Applied Physics Letters

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Articles you may be interested inElectrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes J. Appl. Phys. 110, 063709 (2011); 10.1063/1.3639287Low-power write-once-read-many-times memory devices Appl. Phys. Lett. 97, 053301 (2010); 10.1063/1.3473775Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS coreshell nanoparticles embedded in a polymethyl methacrylate layer Appl. Phys. Lett. 94, 112101 (2009); 10.1063/1.3097805The morphology control of pentacene for write-once-read-many-times memory devices J. Appl. Phys. 103, 024507 (2008); 10.1063/1.2836793Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube composites

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“…Moreover, their superior flexibility, toughness, dimensional stability and device properties can be easily tuned by tailoring their chemical structures during synthesis. [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] However, the realization of high-density polymeric memory devices in a low-cost manner is highly constrained by the fact that the majority of reported polymeric memory materials will readily degrade or dissolve upon exposure to the solvents or wet chemicals used in multilayer device fabrication processes. [21][22][23][24][25] Although some of these materials have high dimensional and mechanical stability, their film forms are not sufficiently resilient to survive the device fabrication process.…”

Section: Introductionmentioning

confidence: 99%

New photopatternable polyimide and programmable nonvolatile memory performances

2017

Self Cite

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We report the first photopatternable, nonvolatile memory consisting of high-temperature polyimide (PI), poly (hexafluoroisopropylidenediphthalimide-4-cinnamoyloxytri-phenylamine) (6F-HTPA-CI), and we demonstrate the successful fabrication and programmable operation of 'write-read-erase' memory devices based on nanoscale thin films of 6F-HTPA-CI. The PI thin film enables scalable fine patternability, providing lines and spaces with excellent pattern fidelity. Isolated individual memory devices were successfully fabricated on a bottom electrode via a sequential process of coating, photopatterning, top electrode deposition, developing, rinsing and drying. The 6F-HTPA-CI cells exhibited excellent nonvolatile memory performances in three different modes (unipolar permanent, unipolar flash and bipolar flash memories), regardless of photo-exposure doses. The switching-ON (writing) voltage was in the range of ± 1.5 to ± 2.0 V, and the switching-OFF (erasing) voltage was in the range of ± 0.3 to ± 0.8 V; these voltages are quite low, indicating that power consumption by the devices during operation is low. The ON/OFF current ratio of the devices was in the range of 10 4 -10 9 . Overall, the photopatternable PI 6F-HTPA-CI opens up the possibility of low-cost mass production of high-performance, high-speed, energy-efficient, permanent or rewritable high-density nonvolatile polymer memory devices suitable for future advanced electronics in highly integrated systems.

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High‐Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films

Cited by 135 publications

References 29 publications

Electrical memory devices based on inorganic/organic nanocomposites

Electrical memory devices based on inorganic/organic nanocomposites

Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

New photopatternable polyimide and programmable nonvolatile memory performances

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