High performance printed N and P-type OTFTs for complementary circuits on plastic substrate

Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications

“…The transfer curves of the complementary N-and P-type OTFTs with L=100µm and W=2000µm are reported on Fig. 4, exhibiting typical mobilities in the range of 1.5 cm2.V-1.s-1 for P-OTFTs and 0.55 cm2.V-1.s-1 for N-OTFTs with high ratio between the On and Off currents for both type [9]. The transfer and output characteristics for the stand-alone P-OTFT, designed with a channel of 500µm in width (multi-finger 4x125µm) and 20µm in length, are presented on the figure 4 Table 1 gives the electrical characteristics of the printed C-OTFT and P-OTFT technologies developed at CEA-LITEN using Sheet-To-Sheet processing.…”

“…The N-type OSC (Polyera ActivInk®) is first formed by screen-printing, with a final thickness in the range of 50-200nm. Then, the source/drain electrodes and the PEN in P-type areas are cleaned with O 2 UV-free plasma [9] in order to prepare the surface for the following SAM and Ptype OSC deposition (Merck lisicon S1200). A common fluoro-polymer dielectric (Merck lisicon D139) is then screenprinted and annealed on top of both semiconductors with a thickness of 750nm, leaving open areas for via holes.…”

Unified drain-current model of complementary p- and n-type OTFTs

“…1) using a bottom-contact top-gate structure for both p-and n-type OTFTs. At first, 30 nm thick layer of gold is deposited by sputtering and patterned by photolithography forming the source and drain electrodes [46]. Then, a selfassembled monolayer (SAM) is used to optimize the charge injection in the semiconductor; different SAMs are used for p-and n-type OTFTs.…”

Bottom-Gate Complementary Inverters on Plastic With Gravure-Printed Dielectric and Semiconductors

“…Kempa et al [12] reported fully-printed complementary inverters and ring oscillators with gain around 5 and 1.5 m thick dielectric printed using flexography and semiconductors printed using gravure. Jacob et al [13] provided another example of fullyprinted complementary inverters with screen-printed dielectric and printed semiconductors with a gain of 1520.…”

“…All inks are based on industry-compatible non-chlorinated solvents and give appropriately defined features. Unlike previous complementary circuits [11][12][13] , we use a bottom-gate configuration. This configuration is preferred by industry because it allows full use of photolithographic processing whilst protecting the semiconductors from UV light and Bottom-Gate Complementary Inverters on Plastic with Gravure-Printed Dielectric and Semiconductors aggressive chemicals by depositing them last.…”