High-performance polymer LED using NiO_x as a hole-transport layer

Abstract

We present an investigation of polymer light-emitting diodes (PLEDs) with a nickelous oxide (NiOx) interlayer fabricated using a radio-frequency magnetron sputtering system.

Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells

“…Nickel oxide is a well-known p-type transparent semiconductor material that has been widely used in electronic, catalytic, and magnetic applications. [1][2][3][4] Some of the applications include silicon solar cells, [5] perovskite solar cells (PSCs), [6] thin film transistors, [7] light-emitting diodes, [8,9] photocatalytic water splitting, [10] resistive switching memory, [11] electrochromic devices, [12] supercapacitors, [13] batteries, [14] and chemical sensors. [15] The stochiometric nickel oxide (NiO) is an excellent insulator (resistivity larger than 10 16 Ωcm, below 100 ºC), [16] and has the highest Neel temperature (T N ) of ≈525 K (amongst all antiferromagnetic transition metal monoxides), below which it is antiferromagnetic.…”

Silver‐doped nickel oxide as an efficient hole‐transport layer in polymer light‐emitting diodes

“…In recent years, several researchers (Chen et al, 2019;Guo et al, 2018;Huang et al, 2020;Jiang et al, 2015;Yan et al, 2018;Yan et al, 2020) have used nickel oxide (NiO) with a wide band gap and p-type characteristics as the HTL of organic photoelectric modules and reported that its performance is better than that of traditional organic photoelectric modules using PEDOT:PSS as the HTL.…”

“…In recent years, several researchers (Chen et al, 2019; Guo et al, 2018; Huang et al, 2020; Jiang et al, 2015; Yan et al, 2018; Yan et al, 2020) have used nickel oxide (NiO) with a wide band gap and p‐type characteristics as the HTL of organic photoelectric modules and reported that its performance is better than that of traditional organic photoelectric modules using PEDOT:PSS as the HTL. For example, many researchers (Huang et al, 2019; Manders et al, 2013; Zhang et al, 2016) have reported the following advantages after the replacement of PEDOT:PSS with NiO as the HTL to construct solar cells: (1) the reverse saturation current is optimized further; (2) a better carrier‐phase morphology is formed at the bulk heterojunction interface, which clearly reduces shunt resistance; (3) visible‐ and infrared‐light absorption is significantly improved; (4) stable performance of device parameters, including power conversion efficiency and fill factor, is improved; (5) due to the electron blocking behaviors, it is much more effective in extracting photogenerated holes.…”

Dopant concentration influence on the optical properties of NiO thin films doped by Al and Nb deposited by DC and RF magnetron sputtering

“…Nickel oxide (NiO) thin films have potential applications in electrochromic devices, photovoltaic (PV) solar cells, photodetectors, light‐emitting diodes, and ultraviolet detectors 1–5 . However, applications that employ NiO thin films require extensive investigation of their optoelectronic properties.…”