High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing

Kohno, Atsushi; Sameshima, Toshiyuki; Sano, Naoki; Sekiya, M.; Hara, Masayuki

doi:10.1109/16.370072

Cited by 152 publications

(64 citation statements)

References 14 publications

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“…High current drive capability is a critical requirement of thin-film transistors (TFTs) for integration of switching devices and peripheral circuit drivers in flat panel displays (FPDs) and imagers (FPIs) [1]. Currently, laser-annealed polycrystalline silicon (poly-Si) TFTs are used for such applications [2].…”

Section: Introductionmentioning

confidence: 99%

High hole and electron mobilities in nanocrystalline silicon thin-film transistors

Lee

Sazonov

Nathan

2006

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

High hole and electron mobilities in nanocrystalline silicon thin-film transistors

Lee

Sazonov

Nathan

2006

Journal of Non-Crystalline Solids

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“…Pulsed laser induced crystallization of silicon films has been precisely investigated and widely applied to fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) [4][5][6][7][8][9][10]. The electrical and structural properties of polycrystalline silicon (poly-Si) thin films formed by pulsed laser irradiation have been reported.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser crystallization of silicon–germanium films

Sameshima¹,

Watakabe²,

Kanno³

et al. 2005

Thin Solid Films

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“…1 treatments (high-temperature sintering or laser annealing), which are not compatible with flexible substrates such as poly (ethylene terephthalate) (PET) and paper (12,14,15,(17)(18)(19)26). One solution suggested for dealing with this problem is to fabricate the device on a high-temperature tolerant substrate first and then transfer it onto a flexible substrate.…”

Section: Significancementioning

confidence: 99%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

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Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi 2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.

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High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing

Cited by 152 publications

References 14 publications

High hole and electron mobilities in nanocrystalline silicon thin-film transistors

High hole and electron mobilities in nanocrystalline silicon thin-film transistors

Pulsed laser crystallization of silicon–germanium films

All-printed diode operating at 1.6 GHz

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