High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene

Abstract

High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

Solution‐Processed Monolayer Organic Crystals for High‐Performance Field‐Effect Transistors and Ultrasensitive Gas Sensors

“…Aligned cracks can be observed, which are attributed to the anisotropic thermal expansion coefficients of the crystal and the thermal expansion mismatch between the silicon substrate and the organic crystals. Similar cracks have been previously observed in C 10 ‐DNTT crystals grown by an edge‐casting method . The inset of Figure a and Figure S4a–f in the Supporting Information indicate a height profile of 4 nm of the monolayer, which agrees well with the (001) d‐spacing value of C 10 ‐DNTT crystals .…”

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

“…3,35,39 In addition, the film surface roughness is independent of pre-annealing temperature as the same decay rates of XRR results are observed, 40 which agrees with the observations from their AFM images. To be more convinced, we fitted the curves using the free software of Parratt 32.…”

“…These values are close to the optimized Si TFTs and much better than a-Si:H TFTs and some single-crystal TFTs. 1, 39 It is a long-standing question on how the active thin film itself influences the device's performance. 3,22,23 Here, it is instructive to plot such a figure that can directly show the correlation.…”

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

“…Nevertheless, trustable mobility values of polycrystalline thin films of didecyl‐DNTT 9 and didecyl‐DNBDT‐NW 13 , measured by the van der Pauw method, reach 6.2 and 6.5 cm 2 V −1 s −1 . Such mobility values are only inferior by a factor 2–3 to those obtained in single crystals, indicating that grain boundaries are not too limiting, at room temperature, for well‐fabricated thin films . However, this conclusion might not be general and not hold true at low temperature .…”