High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide–Diketopyrrolopyrrole Polymer Interface

Abstract

Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole−injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 GΩ, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation.

A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures

“…Transconductance stands as an intrinsic trait of a transistor, delineating the intricate relationship between a variation in the drain current and the increase in the applied gate voltage. − Within its essence lies a metric encapsulating the ability of a transistor in effecting signal modulation or amplification, profoundly affecting the output current dynamics. − Mathematically, transconductance is defined as the ratio of the change in drain current (Δ I d ) to the change in gate voltage (Δ V g ), at fixed other voltage constant. , Transconductance is an evaluation factor in determining the transistor switching or amplifying characteristics, and to be specific, a larger value of transconductance indicates its performance to manipulate their behavior as amplifiers or signal processing components. − Thus, devices only considered its amplitude level without placing significant emphasis on its polarity. However, emerging transconductance behavior, that is, negative differential transconductance was proposed. − This characteristic exhibits a different behavior from conventional transistors, where the size of the output current decreases as the magnitude of the applied gate voltage increases.…”

Mechanical Vibration Energy Harvesting and Vibration Monitoring Based on Triboelectric Nanogenerators

“…In 2012, Wang et al proposed a new power generation technology that converts mechanical energy into electrical energy, named triboelectric nanogenerator (TENG). [17] TENG is a power generation method based on the combination of contact electrification and electrostatic induction, which can harvest mechanical energy from many available resources in the surrounding environment, such as vibration, [18][19][20][21] human movement, [22][23][24] ocean wave, [25][26][27][28] and wind. [29][30][31] Compared with other generators, the TENGs have the advantages of high output voltage, [32,33] high efficiency, [34][35][36][37] and low-cost.…”

Unveiling the Impact of Interfaces and Impurities on Photogenerated Charge Trapping in Phototransistors with Diverse Organic Semiconductor Active-Layer Architectures

“…We fabricated devices based on six types of active layers with various combinations of defects, as illustrated in Figure 1a. To study the intrinsic photoresponse behavior of the OSCs, devices with single-component (noncontaminated) PTCDI-C 5 crystal wire arrays and single-component (noncontaminated) C 8 -BTBT thin films were fabricated via solution processing 28 and thermal vacuum evaporation, respectively. To examine the effect of impurities on the photoresponse behavior, PTCDI-C 5 crystals were cross-contaminated with C 8 -BTBT (PTCDI-C 5 -CC) and C 8 -BTBT crystals were cross-contaminated with PTCDI-C 5 (C 8 -BTBT-CC) using solutions containing both PTCDI-C 5 and C 8 -BTBT in 1,2-dichlorobenzene.…”