High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric

Dai, Min-Kun; Lin, Tai‐Yuan; M, Yang; Lee, Chih‐Kung; Huang, Chih‐Ching; Chen, Yang‐Fang

doi:10.1039/c4tc00598h

Cited by 17 publications

(15 citation statements)

References 43 publications

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“…4(a), C-V hysteresis loops have no obvious changes before the endurance measurement reaches to 4 ×10 4 cycles. However, once it beyond 4×10 4 cycles, both accumulation capacitance (C acc ) and memory window width (|∆V FB |) decrease significantly, as shown as fig. 4(b).…”

Section: Endurance and Retention Properties Of The Memory Structurementioning

confidence: 99%

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

et al. 2016

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A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

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Section: Endurance and Retention Properties Of The Memory Structurementioning

confidence: 99%

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

et al. 2016

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“…Besides these thin-film electrodes, fiber-/mesh-shaped electrodes also demonstrated good flexibility [17,51,64,67,68].…”

Section: Design Of Flexible Electrodesmentioning

confidence: 99%

“…Other flexible substrates include textile [51,52], silk [53,54], paper [55][56][57][58], metalfoil [59,60], shape-memory polymer [61][62][63] and so on. Besides, weavable and fiber-like electrode [17,64]/device configurations [65][66][67][68][69], or even substrate-free free-standing configurations [70] are also demonstrated as effective ways for obtaining flexible devices. This review will focus on the thin-film organic semiconductor devices.…”

Section: Flexible Device Configurationsmentioning

confidence: 99%

“…In the last decades, high-performance flexible organic semiconductor devices have been continually pursued by scientific communities [16,37−48]. For example, OLEDs with external quantum efficiency (EQE) of >30% for blue [1][2][3][4] and green [5][6][7][8][9] emitting devices, and>20% for red [49] emitting devices, OSCs [10,11] and organic-inorganic hybrid perovskite solar cells [12] with power current efficiency (PCE) of >10% and 20%, respectively, OFETs with mobility of several tens cm 2 V −1 s −1 [13,14] and OMDs with high densities, high on/off ratios, fast response and long durability [15][16][17][18] have been reported.…”

Section: Development From Flexible To Ultraflexible Organic Semicondumentioning

confidence: 99%

“…The active semiconductors can be organic channel materials for OFETs, organic light-emitting materials for OLEDs, organic photoactive materials for OSCs, organic memory materials for OMDs. To date, great improvements have been made for achieving high performance that is comparable to their inorganic counterparts [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Qian

Zhang

et al. 2016

Sci. China Mater.

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Flexible thin-film organic semiconductor devices have received wide attention due to favorable properties such as light-weight, flexibility, reproducible semiconductor resources, easy tuning of functional properties via molecular tailoring, and low cost large-area solution-procession. Among them, ultraflexible electronics, usually with minimum bending radius of less than 1 mm, are essential for the development of epidermal and bio-implanted electronics, wearable electronics, collapsible and portable electronics, three dimensional (3D) surface compliable electronics, and bionics. This review firstly gives a brief introduction of development from flexible to ultraflexible organic semiconductor electronics, and design of ultraflexible devices, then summarizes the recent advances in ultraflexible thin-film organic semiconductor devices, focusing on organic field effect transistors, organic light-emitting diodes, organic solar cells and organic memory devices.

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Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

Ling

et al. 2019

Adv Funct Materials

216

200

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With the incorporation of tailorable organic electronic materials as channel and storage materials, organic field‐effect transistor (OFET)‐based memory has become one of the most promising data storage technologies for hosting a variety of emerging memory applications, such as sensory memory, storage memory, and neuromorphic computing. Here, the recent state‐of‐the‐art progresses in the use of small molecules for OFET nonvolatile memory and artificial synapses are comprehensively reviewed, focusing on the characteristic features of small molecules in versatile functional roles (channel, storage, modifier, and dopant). Techniques for optimizing the storage capacity, speed, and reliability of nonvolatile memory devices are addressed in detail. Insight into the use of small molecules in artificial synapses constructed on OFET memory is also obtained in this emerging field. Finally, the strategies of molecular design for improving memory performance in view of small molecules as storage mediums are discussed systematically, and challenges are addressed to shed light on the future development of this vital research field.

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High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric

Cited by 17 publications

References 43 publications

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

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