This article investigates the degradation mechanisms of total ionizing dose (TID) effects in photocouplers under different bias conditions. The irradiation measurement of silicon-based photocoupler devices is carried out by using a 60 Co γ-ray source under various radiation bias conditions. The results of the test indicate that the current transfer rate (CTR) of the photocoupler reduces with an increase in the total dose. In addition, the non-luminous traps produced by the TID irradiation in the diffusion region of the PN junction of the light-emitting diode within the photocoupler cause more severe total dose effects when the input current of the device is low. This could be attributed to the charges being captured more easily in such scenarios. These representative results support the reliable application of the photocoupler devices in space radiation environments.