High‐Performance Organic Field‐effect Transistors from Functionalized Zinc Meso‐Porphyrins

Abstract

A series of new zinc porphyrins were synthesized, and their charge transport property was tuned by introducing various groups. Triarylamine was introduced to the porphyrin moiety at the meso‐position as an electron donor, enhancing the charge carrier mobility. All the synthesized zinc porphyrins are thermally stable with a decomposition temperature over 178 °C. High frontier molecular orbitals levels of these compounds make them stable donor materials. SEM analysis of zinc porphyrins fabricated by spin‐coating resulted in diversely self‐assembled films. Field‐effect transistors were fabricated using bottom‐gate/top‐contact architecture (BGTC) by solution‐processable technique. The higher charge carrier mobility of 5.17 cm2/Vs with on/off of 106 was obtained for trifluoromethyl substituted compound due to better molecular packing. In addition, GIXRD analysis revealed zinc porphyrins films crystalline nature, which supports its better charge carrier mobility. The present investigation has validated that zinc porphyrin building blocks are an attractive candidate for p‐channel OFET devices.