High-performance optoelectronics for integrated photonic neural networks

Abstract

Integrated optoelectronic devices represents a fundamental building block of hardware accelerators for photonics neural networks. Nanophotonic electro-optic modulators and detectors have significant performance advantages in power efficiency, communication bandwidth, and parallelism compared to conventional free-space photonics. Here, we present strategies and experimental validations of novel high-performance nanophotonic opto-electronic devices, involving heterogeneous integration of emerging materials into silicon photonic integrated circuits to exploit new functionality and device-scaling laws for efficient and ultrafast modulators, detectors, and photonic nonvolatile memory. The optoelectronic implementations of neural networks are demonstrated which significantly extends the spectrum of information processing capabilities.

A strain modulated and self-powered broadband photodetector based on MoS2/Sb2Te3 heterojunction

“…Beyond these, the potential of MoS2 in Photonic Integrated Circuit (PIC) applications further elevates its status, fortifying its position as a cornerstone for the inception of more energy-conserving, miniaturized, and adaptable devices in the imminent technological future. [43][44][45][46][47] Its impressive electrical, optical, and mechanical properties have spurred investigations into a variety of applications ranging from transistors, sensors, and photodetectors to more advanced realms such as quantum computing and nanoscale photonics. [48][49][50][51] The scalability and tunability of MoS2's properties, when combined with other 2D materials or integrated into hybrid structures, further amplify its potential, opening doors to innovative multi-functional devices.…”