High Performance of Trench Schottky Contact Super Barrier Rectifier With a p-Injector

Chen, Wensuo; Liao, Ruijin; Zhang, Peijian; Zeng, Zheng; Zhang, Chao

doi:10.1109/ted.2017.2776164

Cited by 8 publications

(7 citation statements)

References 20 publications

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“…The results of this simulation method were compared with experiment results, and good agreements were confirmed in the case of the planar gate structure of NEL-SSBR [14]. During simulation, conventional SBD, conventional TMBS and vertical SSBR [17] are selected as the contrast structures.…”

Section: Resultsmentioning

confidence: 93%

“…1 (b)) with a grid of vertical SSBR (insert in Fig. 1 (a)) [17]. The cross-sectional area of the proposed TMB-SSBR is larger than that of the conventional TMBS, and the operation mechanism for this will be discussed in the next section.…”

Section: Device Structurementioning

confidence: 99%

“…According to the operation of SBR/SSBR [14]- [17], [28], [29], as a result of body effect, the threshold voltage of top vertical MOS channel is reduced [29]. Therefore, the low turn-on voltage for the proposed TMB-SSBR is obtained.…”

Section: Device Structurementioning

confidence: 99%

“…Recently, the concept of Schottky contact super barrier rectifier (SSBR) has been proposed and verified by simulation and experiment results by our group [14]- [17]. SSBR, which is different from SBR or MOS Channel Diode [18]- [21], shows good performances in simple manufacturing process, small forward voltages, low reverse leakage currents and high-temperature reliability.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

Zhang

Zhu

Chen

2024

IEICE Trans. Electron.

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In this paper, a novel trench MOS barrier Schottky contact super barrier rectifier (TMB-SSBR) is proposed by combining the advantages of vertical SSBR and conventional TMBS. The operation mechanism and simulation verification are presented. TMB-SSBR consists of MOS trenches with a vertical SSBR grid which replaces the Schottky diode in the mesa of a TMBS. Due to the presence of top p-n junction in the proposed TMB-SSBR, the image force barrier lowering effect is eliminated, the pinching off electric field effect by MOS trenches is weakened, so that the mesa surface electric field is much larger than that in conventional TMBS. Therefore, the mesa width is enlarged and the n-drift concentration is slightly increased, which results in a low specific on-resistance and a good tradeoff between reverse leakage currents and forward voltages. Compared to a conventional TMBS, simulation results show that, with the same breakdown voltage of 124 V and the same reverse leakage current at room temperature, TMB-SSBR increases the figure of merit (FOM, equates to V 2 B /R on,sp ) by 25.5%, and decreases the reverse leakage by 33.3% at the temperature of 423 K. Just like the development from SBD to TMBS, from TMBS to TMB-SSBR also brings obvious improvement of performance.

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Section: Resultsmentioning

confidence: 93%

Section: Device Structurementioning

confidence: 99%

Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

Zhang

Zhu

Chen

2024

IEICE Trans. Electron.

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“…Because of its larger channel density, the trench-gate-type SBR (TSBR) removing JFET region can have ultralow forward voltages. Although some new structures for TSBRs were published to create practical devices recently [8][9][10][11][12][13], these configurations have some adverse impacts such as relatively low breakdown voltage or potential reliability issues.…”

Section: Introductionmentioning

confidence: 99%

Investigations on Breakdown Voltage of Trench-gate-type Super Barrier Rectifier with Stepped Oxide

Wang

et al. 2022

J. Phys.: Conf. Ser.

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A novel trench-gate-type super barrier rectifier (TSBR) with stepped oxide (SO-TSBR) is proposed and researched by device simulator. As an improved TSBR structure, the proposed SO-TSBR with high breakdown voltages be effective in achieving low forward voltage drop. Simulations have demonstrated the two-dimensional charge coupling in the N-drift region resulting in an optimal electric field distribution. The 280 V SO-TSBR used for the numerical simulations decreases the on-state drop by 26.6% at the forward current density of 2.5 A/cm2 than that of the conventional TSBR. The SO-TSBR with deep trench structure reduces further the forward voltage drop by 11.0% at the forward current density of 20 A/cm2.

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