High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O₃ Photocuring

Abstract

The development of p-type metal-oxide semiconductors (MOSs) is of increasing interest for applications in next-generation optoelectronic devices, display backplane, and lowpower-consumption complementary MOS circuits. Here, we report the high performance of solution-processed, p-channel copper-tinsulfide-gallium oxide (CTSGO) thin-film transistors (TFTs) using UV/O 3 exposure. Hall effect measurement confirmed the p-type conduction of CTSGO with Hall mobility of 6.02 ± 0.50 cm 2 V −1 s −1 . The p-channel CTSGO TFT using UV/O 3 treatment exhibited the field-effect mobility (μ FE ) of 1.75 ± 0.15 cm 2 V −1 s −1 and an on/off current ratio (I ON /I OFF ) of ∼10 4 at a low operating voltage of −5 V. The significant enhancement in the device performance is due to the good p-type CTSGO material, smooth surface morphology, and fewer interfacial traps between the semiconductor and the Al 2 O 3 gate insulator. Therefore, the p-channel CTSGO TFT can be applied for CMOS MOS TFT circuits for next-generation display.

Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm2 V–1 s–1 and Excellent Bias Stability

“…Both Cu and Sn have the possibility of two stable oxidation states (+1 and +2) and (+2 and +4), and their corresponding ionic radii are (91 and 87) and (118 and 83 pm), respectively. [41,42] Due to the similar ionic radii of Sn 4+ and Cu + , the Sn 4+ substitution on Cu sites can keep the original lattice structure with a negligible shift in peak position. The V cu passivation can expand the CuI lattice slightly, leading the XRD peak shift toward the left.…”

“…[24,25,27] The ionic radii, bond dissociation energy, and standard electrode potential (SEP) play major role to improve film quality for electronic devices. [46,41] The charge transport properties of the p-type pristine CuI and Sn-alloyed CuI semiconductors were studied using TFTs. The transfer and I DS 1/2 vs. V GS curves of the pristine-CuI and Sn-alloyed CuI TFTs are respectively shown in Figure 3a,b.…”

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

“…S12c and d (ESI † ). 54–56 The turn-on voltage ( V ON ) is defined as the gate-source voltage ( V GS ) at which the I DS rapidly increases. The electrical properties (such as mobility, V TH , N SS , and drain current) of CTSGO TFT are summarized in Table S2.…”

“… 53 Copper–tin–sulfide–gallium oxide (CTSGO) is one of the emerging materials for p-type MO semiconductors owing to its favorable bandgap. 54,55 Therefore, developing p-type MO semiconductors has become of utmost importance for high-performance, low-power TFT electronics.…”

Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs

“…Therefore, for the solution-processed AOS TFTs, the nitrate precursors have been implemented as a manufacturing method for semiconductor films, dielectrics, and transparent electrodes. Recently, high-performance AOS TFTs fabricated at temperatures below 150 °C have been reported by applying improved processing techniques [ 20 , 21 , 22 , 23 ].…”