High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide‐Based Supramolecular Electrets

Abstract

We report pentacene-based organic field-effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH-ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1-aniline (AM1), 2-naphthylamine (AM2), 2-aminoanthracene (AM3), and 1-aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1-AM4 on the hole-trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1-AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole-trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge-retention time of 10(4) s with an ON/OFF current ratio of around 10(3) -10(4) and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.

From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport

“…To the best of our knowledge, the proposed device exhibits the best endurance properties among polymer electret‐type OTFT memory devices by using SiO 2 as dielectric (shown in Table 1 ). [ 19,39–55 ]…”

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

“…This work provides potential opportunities for developing the photosensitive electret materials in organic nonvolatile memory. Polyimides (PIs) is a series of developing materials to serve as polymer electrets profiting from their superior electrical, thermal, and mechanical properties . OFETM based on an n‐type small molecular semiconductor named as N , N ′‐bis(2‐phenylethyl)perylene‐3,4;9,10‐tetra‐carboxylic diimide (BPE‐PTCDI) were fabricated .…”

Honeycomb‐Patterned Polyimide Film as a Versatile Coating for High‐Performance Dielectric Material

“…[6][7][8][9][10] Polyimide (PI) has been generally regarded as one of the candidates with the most potential in this regardo wing to its good chemical and thermals tability alongw ith its noteworthy dielectric and mechanical properties. [11][12][13][14][15] However,i ts wider application in the rapidly developing field of microelectronics hasb een restricted because the dielectric constant (3)(4) and water absorption( 2-4 %) of commerciallya vailable PI film are not low enough. [16] It is therefore of particulari mportance to develop new methods to decrease its dielectric constant and water absorption.…”

“…Low‐dielectric‐constant materials are of particular interest because of their wide use in integrated circuits to reduce electronic signal interference, power dissipation, propagation delay, and so on . Polyimide (PI) has been generally regarded as one of the candidates with the most potential in this regard owing to its good chemical and thermal stability along with its noteworthy dielectric and mechanical properties . However, its wider application in the rapidly developing field of microelectronics has been restricted because the dielectric constant (3–4) and water absorption (2–4 %) of commercially available PI film are not low enough .…”