High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative

Abstract

Developing high‐quality electret layer is important for the fabrication of high‐performance nonvolatile organic field effect transistor memory devices (OFET‐NVMs). In this work, three representative aromatic diimide frameworks are employed for comparative studies as n‐type doping materials for the electret layers in OFET‐NVMs, which are naphthalene diimide (NDI), perylene diimide (PDI), and pyrene diimide (PyDI). When blended with polystyrene (PS) to prepare the electret layers, all the memory devices containing aromatic diimide dopants exhibited significantly improved performances compared with the undoped counterparts, indicating that low‐lying LUMO energy levels of these dopants are beneficial for charge injection. All the devices with n‐type dopants exhibited long retention times (more than 104 s) and good switching reliability in more than 400 continuous write‐read‐erase‐read cycles. Among them, the PyDI‐based memory device exhibited superior performance compared with other aromatic diimides, which achieved a memory window of 34.0 V, a trapping charge density of 1.98 × 1012 cm−2 along with an on/off ratio higher than 104. This work indicates that PyDI framework could be a new platform for the future design of n‐type dopant for high‐performance nonvolatile organic field‐effect transistor memory devices.

Doping Approaches for Organic Semiconductors

“…Device performance tuning via molecular doping has been reported for various other technologies over the years. Nonvolatile memory devices are among them, where doping was found to improve critical device parameters like storage capacity (refs and ), on/off ratio (refs − ), memory window (refs , , , and ), and trapping density (refs − , and ), to name but a few. Doping of OFET-based memory has been reported either by adding an n-type dopant ( o -MeO-DMBI) (ref ) to a p-type semiconductor or an ionic dopant (TBAP) in an ambipolar semiconductor (ref ).…”

“…The electret-based OFET memories are a comparatively new class of nonvolatile memory devices. − Here, doping can be implemented by incorporating the dopant molecules in the semiconductor layer or in the electret layer. ,− Both approaches have been shown to improve the carrier trapping density, which in turn helped to enhance the storage capabilities by widening the memory window. In addition to three-terminal OFET memories, numerous studies have also reported the development of two-terminal devices using fluorescent dye and ionic conductors as dopants.…”

Theoretical Design of Efficient Small Molecules with sp2 Hybridized Nitrogen at Varying Positions for Organic Pull Push (ON/OFF) Solar Switches

“…When the distance separating HOMO and LUMO broadens, it has a number of consequences [46]. The dipole moment is frequently associated with the stability of tiny organic solar cells in polar organic solvents.…”

Thiochromenocarbazole imide: a new organic dye with first utility in large area flexible electroluminescent devices

“…1) and perylene diimide (PDI, Fig. 1) are the keystones of many reference n-type semiconducting materials 5,6 used in various optoelectronic applications such as organic field effect transistors (OFETs), 7,8 fluorescent sensors, 9,10 electro-photographic devices, 11 laser dyes, 12–14 organic photovoltaics (OPV) 15–18 or organic light-emitting diodes (OLEDs), 19–21 CO 2 reduction, 22 and H 2 production. 23…”