Abstract:A novel and simple method is proposed to produce high-performance nitrided oxides. Thin oxides nitrided only in NH3 at 900° C for 1 h at 0.1 Torr have excellent interface stability, few electron traps, and excellent reliability. Although the nitrogen concentration [N] at the dielectric/Si substrate interface is kept at a low value, the hydrogen concentration [H] has been shown to be comparable to that of pure oxide at the beginning of the nitridation. Consequently, a high ratio of [N]/[H], which reflects the … Show more
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