High‐Performance Nanowire Oxide Photo‐Thin Film Transistor

Ahn, Seung‐Eon; Jeon, Sanghun; Jeon, Youg Woo; Kim, Changjung; Lee, Myoung-Jae; Lee, Chang-Won; Park, Jongbong; Song, Ihun; Nathan, Arokia; Lee, Sungwon; Chung, U‐In

doi:10.1002/adma201301102

Cited by 50 publications

(53 citation statements)

References 24 publications

(29 reference statements)

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“…38,39 In the continuous-wave excitation, the recombination of the accumulated charge and the photoexcited charges limit overall responsivity. We measured temporal response of the photocurrent under square puled illumination at 3.08 eV (403 nm), as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

Jeong

Heo

Kyoung

et al. 2015

ECS J. Solid State Sci. Technol.

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The need for low-cost and highly versatile photosensing devices keeps increasing. In this work, we present a heterojunction device based on wafer-scale graphene grown by chemical vapor deposition (CVD) and sputtered InGaZnO (IGZO) semiconductor for dual mode photocurrent collection. The photocurrent can be collected either from the lateral gold/graphene/gold configuration or from the vertical graphene/IGZO/nickel heterojunction configuration with no external bias. Incident-energy-dependent photocurrent scanning microscopy shows that the dominant photocarriers are formed at the edge of the gold electrode through photo-thermoelectric hot hole generation in the lateral configuration. Vertical mode renders unidirectional current flow by photoexcited electrons in the IGZO and the subsequent relaxation and diffusion due to Fowler-Nordheim potential. © 2015 The Electrochemical Society. [DOI: 10.1149/2.0071512jss] All rights reserved.Manuscript submitted July 7, 2015; revised manuscript received September 9, 2015. Published September 22, 2015 Graphene is a two dimensional carbon-chained material that has been extensively studied for promising photonic and optoelectronic applications.1-3 Zero bandgap and a fast carrier relaxation process in intrinsic graphene facilitate ultra-broadband and ultrafast light detectors. [4][5][6][7] Under light illumination, graphene with lateral contact electrodes generates photocurrent through a photovoltaic, bolometric, or photo-thermoelectric mechanisms depending on bias and gating conditions. [8][9][10][11][12][13][14][15] Recently, photodetectors based on graphene heterojunctions have been extensively highlighted. Currently, Schottky-barrier-type vertical heterojunctions composed of graphene/silicon, [16][17][18][19][20] reduced-graphene-oxide (RGO)/silicon, 21 and RGO/silicon nanowire 22 have been successfully demonstrated. Unlike lateral photocurrent collection, the vertical junctions take advantage of an asymmetric barrier potential to efficiently separate photoexcited electrons and holes, which might pave the way for light detection with large active areas without the need for external source-drain bias.Here, we demonstrate a heterojunction device capable of dual mode photocurrent collection under zero source-drain bias based on a graphene grown by chemical vapor deposition (CVD) and amorphousphase indium gallium zinc oxide (IGZO). Here, dual mode means that the photocurrent can flow either from a lateral pair of the electrodes or from a vertical pair of electrodes. Versatile photodetection schemes allow to broaden the range of selection for applications such as photoenergy harvesting, phototransistor, and photoconductive detector. 1,2,14 Unlike silicon, IGZO semiconductors can be grown on glass substrates at low temperatures, typically below 200• C so that large area device fabrication is possible. IGZO has been widely used for image sensors, flat-panel displays, and thin film transistors. [23][24][25] The typical mobility of the IGZO film is about 10-60 cm 2 /Vs. 23,25,26 Interes...

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Section: Resultsmentioning

confidence: 99%

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

Jeong

Heo

Kyoung

et al. 2015

ECS J. Solid State Sci. Technol.

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“…However, the bilayer channel thicknesses should be optimized for IEDM15-149 6.7.1 978-1-4673-9894-7/15/$31.00 ©2015 IEEE enhancement mode operation. Additionally, a nano-wire (NW) TFT structure is also demonstrated for high fill factor/aperture ratio arrays [4].…”

Section: Oxide Semiconductor Technology For Photosensingmentioning

confidence: 99%

Oxide thin film transistor technology: Capturing device-circuit interactions

Nathan

Lee

Jeon

et al. 2015

2015 IEEE International Electron Devices Meeting (IEDM)

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“…Then the conduction band of the IZO active layer is lowered and the back channel is connected from source to drain efficiently. 16 Consequently, the energy barrier between the source electrode and the conduction band is lowered and the electrons at the source electrode are able to overcome the barrier even at low V D . This leads to a significant photocurrent and high photoresponsivity.…”

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confidence: 99%

“…This conduction band lowered by light irradiation at local site was simulated at the previously reported study. 16 When photons are irradiated on photo-TFTs, the activated oxygen vacancies generate carriers at the source interface, lower the conduction band, and finally, when the energy barrier is low enough for electrons to overcome it, the photocurrent is generated.…”

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“…11 Recently, we also proved that the photocurrent generation could be attributed to an energy barrier reduction at the interface between the electrode and the active layer. 16 Based on those interface-dependent photocurrent mechanisms, we studied the oxide photo-TFTs with enhanced photoresponsivity, employing transparent electrodes. By changing the source and drain electrodes (S/D) from opaque metal to transparent conducting oxide, the incident light is affecting the interface between electrode and active layer immediately.…”

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Impact of transparent electrode on photoresponse of ZnO-based phototransistor

Lee

Ahn

Jeon

et al. 2013

Applied Physics Letters

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ZnO-based photo-thin film transistors with enhanced photoresponse were developed using transparent conductive oxide contacts. Changing the electrode from opaque Mo to transparent In-Zn-O increases the photocurrent by five orders of magnitude. By changing the opacity of each source and drain electrode, we could observe how the photoresponse is affected. We deduce that the photocurrent generation mechanism is based on an energy band change due to the photon irradiation. More importantly, we reveal that the photocurrent is determined by the energy barrier of injected electrons at the interface between the source electrode and the active layer.

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High‐Performance Nanowire Oxide Photo‐Thin Film Transistor

Cited by 50 publications

References 24 publications

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

Oxide thin film transistor technology: Capturing device-circuit interactions

Impact of transparent electrode on photoresponse of ZnO-based phototransistor

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