High-performance n – Si/p – SeO2 /p – SiO2  heterojunction photodetectors for potential application in visible light communication technology

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

“…The current (I ) -voltage (V ) characteristic curves for the ASZ devices in the dark and under IR photo-excitation is shown in figure 3 Values of Rec. ratios exceeding 10 3 is read under biasing voltage ∼8.5 V. This ratio is high enough and nominates the ASZ devices for use as current rectifiers [9,19,20]. The rectification ratio increases with increasing biasing voltage.…”

“…The rectification ratio increases with increasing biasing voltage. A phenomenon observed in tunneling type photodetectors in which current conduction is dominated by electric field assisted thermionic emission or tunneling [19,20]. Following our previous works on hybrid structures [19] we have carried out deep current conduction analysis assuming the domination of tunneling current (I Tun ), Richardson-Schottky (thermionic emission) because ASZ devices comprise two Schlocky barriers at the Ag/n-Si and Au/n-Si sides, diffusion current (I diff ) resulting from the contribution of minority carrier diffusion (due to the formation of pn junction) and a drift current (I Drif ) originating either by the formation of space charges or the charge injection [9].…”

“…A phenomenon observed in tunneling type photodetectors in which current conduction is dominated by electric field assisted thermionic emission or tunneling [19,20]. Following our previous works on hybrid structures [19] we have carried out deep current conduction analysis assuming the domination of tunneling current (I Tun ), Richardson-Schottky (thermionic emission) because ASZ devices comprise two Schlocky barriers at the Ag/n-Si and Au/n-Si sides, diffusion current (I diff ) resulting from the contribution of minority carrier diffusion (due to the formation of pn junction) and a drift current (I Drif ) originating either by the formation of space charges or the charge injection [9]. These currents are given by the following equations [9,19],…”

“…Current conduction by drift and diffusion (diffusion current is shown as an inset in figure 3(b)) is dominant at low forward and reverse biasing voltages. Thus the low reverse biased current originates from diffusion of minority carriers within the n-Si/Au/ p-ZnPc junction [9,19]. On the other hand the high current values achieved under forward biasing of the device is attributed to the Schottky arms at the Ag/n-Si and n-Si/Au parts.…”

Long infrared detector based on Se-hyperdoped black silicon

“…Nonetheless, hyperdoped b-Si films encounter issues such as surface defects [19] and unbound chemical bonds that cause surface recombination [22], leakage currents, and diminished responsivity. These complications can be addressed through passivation, which effectively neutralizes adverse surface states and rectifies unbound surface bonds [22][23][24][25][26][27][28][29][30][31][32][33][34].…”