High Performance MWIR and LWIR (Hg,Cd)Te Heterostructure Photodiodes

Vydyanath, H. R.; Ward, Phillip B.; Hampton, Stephen R.; Fishman, L.; Sławiński, Janusz; Devaney, C.; Ellsworth, J.; Krueger, T.

doi:10.1117/12.936520

Cited by 3 publications

(1 citation statement)

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“…5. A common practice 21,22 in detector analysis is to attempt to determine the dark current mechanisms with a best fit to the R 0 A vs. 1/T curve in the temperature region where the slopes of the R 0 A vs. 1/T plot are changing, as shown in the middle part of Fig. 5.…”

Section: Resultsmentioning

confidence: 99%

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

Juang

Chang

et al. 1999

J. Electrochem. Soc.

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Experimental and theoretical results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg 1Ϫx Cd x Te ion-implanted p-n junction photodiodes with x Ϸ 0.22 passivated with ZnS/CdS layers. By measuring the temperature dependence of the dc characteristics in the temperature range 25-140 K, the dark current mechanisms are studied and the validity of the modeling is confirmed. It was found that the dark currents can be represented with three current components over a broad range of voltage and temperature. At high temperature (>90 K) and in low reverse bias region, the diffusion current dominates. On the other hand, at medium temperature (40-80 K) and medium reverse bias (< Ϫ0.15 V), trap-assisted tunneling plays an important role. At low temperature (<40 K) and in the medium reverse bias region (< Ϫ0.15 V), band-to-band tunneling is the key leakage current source. However, when the temperature is further lowered to 25 K and the applied reverse bias is very small (Ϫ0.15 to 0 V), the band-to-band tunneling current will be ruled out and the trap-assisted tunneling mechanism dominates again.

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Section: Resultsmentioning

confidence: 99%

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

Juang

Chang

et al. 1999

J. Electrochem. Soc.

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Amphoteric behaviour of group V dopants in (Hg, Cd)Te

Vydyanath¹

1990

Semicond. Sci. Technol.

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The electrical behaviour of phosphorus in bulk Hgo8Cdo,,Te crystals is compared with that in Hg,,Cd,,Te epitaxial films grown from Te-rich solutions. The mass action constants associated with the process of site transfer of phosphorus atoms from Hg to Te or interstitial lattice sites have been deduced for the bulk crystals and the epitaxial films. Additionally, the mass action constants for the lattice site transfer of As and Sb have also been deduced. The values of these constants indicate that the lack of site transfer from Hg to Te or interstitial lattice sites in the case of Sb and Bi, inferred experimentally in epitaxial films, is ascribed to a lower diffusivity of the Sb and Bi atoms in (Hg, Cd)Te. The implications of the amphoteric behaviour of the group V dopants on device fabrication are also discussed.

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Current and future trends in infrared focal plane array technology

Becker

2005

SPIE Proceedings

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High Performance MWIR and LWIR (Hg,Cd)Te Heterostructure Photodiodes

Cited by 3 publications

References 0 publications

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

Amphoteric behaviour of group V dopants in (Hg, Cd)Te

Current and future trends in infrared focal plane array technology

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